{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Hadke SS"],"funding":["Ministry of Education - Singapore (MOE)"],"pagination":["8240"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12417543"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["16(1)"],"pubmed_abstract":["The photovoltaic performance of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> is limited by open-circuit voltage losses (ΔV<sub>OC</sub>) in the radiative (ΔV<sub>OC</sub><sup>Rad</sup>) and non-radiative (ΔV<sub>OC</sub><sup>Nrad</sup>) limits, due to sub-bandgap absorption and deep defects, respectively. Recently, several devices with power conversion efficiencies approaching 15% have been reported, prompting renewed interest in the possibility that the key performance-limiting factors have been addressed. In this work, we analyze the sources of ΔV<sub>OC</sub> in these devices and offer directions for future research. We find that ΔV<sub>OC</sub><sup>Rad</sup>, arising from bandgap fluctuations and Urbach tails, has been significantly suppressed, with values comparable to those of commercial Cu(In,Ga)(S,Se)<sub>2</sub> solar cells. However, the recombination parameter J<sub>0</sub>, which is more directly related to ΔV<sub>OC</sub><sup>Nrad</sup>, shows only modest improvement and must be reduced by four to six orders of magnitude to compete with Cu(In,Ga)(S,Se)<sub>2</sub>. To approach the theoretical efficiency limit, future work should focus on more directly addressing deep defects and ΔV<sub>OC</sub><sup>Nrad</sup>."],"journal":["Nature communications"],"pubmed_title":["Understanding efficiency losses from radiative and nonradiative recombination in Cu&lt;sub&gt;2&lt;/sub&gt;ZnSn(S,Se)&lt;sub&gt;4&lt;/sub&gt; solar cells."],"pmcid":["PMC12417543"],"funding_grant_id":["RG155/23"],"pubmed_authors":["Liang G","Shao Z","Meng Q","Wu S","Su Z","Hadke SS","Xin H","Wong LH"],"additional_accession":[]},"is_claimable":false,"name":"Understanding efficiency losses from radiative and nonradiative recombination in Cu&lt;sub&gt;2&lt;/sub&gt;ZnSn(S,Se)&lt;sub&gt;4&lt;/sub&gt; solar cells.","description":"The photovoltaic performance of Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> is limited by open-circuit voltage losses (ΔV<sub>OC</sub>) in the radiative (ΔV<sub>OC</sub><sup>Rad</sup>) and non-radiative (ΔV<sub>OC</sub><sup>Nrad</sup>) limits, due to sub-bandgap absorption and deep defects, respectively. Recently, several devices with power conversion efficiencies approaching 15% have been reported, prompting renewed interest in the possibility that the key performance-limiting factors have been addressed. In this work, we analyze the sources of ΔV<sub>OC</sub> in these devices and offer directions for future research. We find that ΔV<sub>OC</sub><sup>Rad</sup>, arising from bandgap fluctuations and Urbach tails, has been significantly suppressed, with values comparable to those of commercial Cu(In,Ga)(S,Se)<sub>2</sub> solar cells. However, the recombination parameter J<sub>0</sub>, which is more directly related to ΔV<sub>OC</sub><sup>Nrad</sup>, shows only modest improvement and must be reduced by four to six orders of magnitude to compete with Cu(In,Ga)(S,Se)<sub>2</sub>. To approach the theoretical efficiency limit, future work should focus on more directly addressing deep defects and ΔV<sub>OC</sub><sup>Nrad</sup>.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Sep","modification":"2026-05-27T08:03:04.43Z","creation":"2026-05-24T03:06:55.347Z"},"accession":"S-EPMC12417543","cross_references":{"pubmed":["40921765"],"doi":["10.1038/s41467-025-63345-x"]}}