{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Wang MW"],"funding":["Fundo para o Desenvolvimento das Ci?ncias e da Tecnologia","Universidade de Macau"],"pagination":["9242-9248"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12434719"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["16(36)"],"pubmed_abstract":["High-quality hole injection layers (HILs) are essential for efficient and stable quantum dot light-emitting diodes (QLEDs). While NiO<sub><i>x</i></sub> is a stable alternative to the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HIL, its low hole injection limits its practical application. This work enhances NiO<sub><i>x</i></sub> hole injection efficiency by combining Mg alloying to deepen work function (5.49 eV vs 5.20 eV) with O<sub>3</sub> treatment to boost conductivity while suppressing traps. Using sol-gel synthesized Mg-alloyed NiO<sub><i>x</i></sub> nanoparticles followed by O<sub>3</sub> treatment via atomic layer deposition, the resulting QLEDs achieve peak efficiencies of 17.85 cd A<sup>-1</sup> and 11.23 lm W<sup>-1</sup>, representing 54% and 171% improvements over NiO<sub><i>x</i></sub>-based QLEDs (11.56 cd A<sup>-1</sup>, 4.15 lm W<sup>-1</sup>). Operational stability significantly improves, with a <i>T</i><sub>50</sub> lifetime of 272 h (<i>L</i><sub>0</sub> = 1000 cd m<sup>-2</sup>), over 2.2-fold that of NiO<sub><i>x</i></sub>-based QLEDs (84 h). This methodology provides a viable pathway to develop a NiO<sub><i>x</i></sub> HIL for advancing stable and high-efficiency QLEDs."],"journal":["The journal of physical chemistry letters"],"pubmed_title":["Mg-Incorporated Nickel Oxide Hole Injection Layer for Stable and Efficient Quantum Dot Light-Emitting Diodes."],"pmcid":["PMC12434719"],"funding_grant_id":["0038/2019/A1","0107/2023/AFJ","0083/2023/ITP2","0027/2023/AMJ","MYRG2020-00082-IAPME","MYRG-GRG2023-00230-IAPME-UMDF","199/2017/A3"],"pubmed_authors":["Liu H","Jiang J","Song YM","Wang MW","Ding T","Gao PL","Ng KW","Wang SP"],"additional_accession":[]},"is_claimable":false,"name":"Mg-Incorporated Nickel Oxide Hole Injection Layer for Stable and Efficient Quantum Dot Light-Emitting Diodes.","description":"High-quality hole injection layers (HILs) are essential for efficient and stable quantum dot light-emitting diodes (QLEDs). While NiO<sub><i>x</i></sub> is a stable alternative to the poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) HIL, its low hole injection limits its practical application. This work enhances NiO<sub><i>x</i></sub> hole injection efficiency by combining Mg alloying to deepen work function (5.49 eV vs 5.20 eV) with O<sub>3</sub> treatment to boost conductivity while suppressing traps. Using sol-gel synthesized Mg-alloyed NiO<sub><i>x</i></sub> nanoparticles followed by O<sub>3</sub> treatment via atomic layer deposition, the resulting QLEDs achieve peak efficiencies of 17.85 cd A<sup>-1</sup> and 11.23 lm W<sup>-1</sup>, representing 54% and 171% improvements over NiO<sub><i>x</i></sub>-based QLEDs (11.56 cd A<sup>-1</sup>, 4.15 lm W<sup>-1</sup>). Operational stability significantly improves, with a <i>T</i><sub>50</sub> lifetime of 272 h (<i>L</i><sub>0</sub> = 1000 cd m<sup>-2</sup>), over 2.2-fold that of NiO<sub><i>x</i></sub>-based QLEDs (84 h). This methodology provides a viable pathway to develop a NiO<sub><i>x</i></sub> HIL for advancing stable and high-efficiency QLEDs.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Sep","modification":"2026-06-01T15:47:19.908Z","creation":"2026-04-08T13:50:52.304Z"},"accession":"S-EPMC12434719","cross_references":{"pubmed":["40877751"],"doi":["10.1021/acs.jpclett.5c02298"]}}