biostudies-literatureWei HFlag-Era JTCEuropean Union's H2020 Future and Emerging Technologies Graphene FlagshipEOSFrench RENATECH network.Fonds de la Recherche Scientifique de Belgique (F.R.S.-FNRS)HORIZON EIC PATHFINDER OPEN 2022Fédération Wallonie-Bruxelles ARC grantsCNRS-CEA "METSA" French networkFrance 2030 program (ANR)e2506140https://www.ebi.ac.uk/biostudies/studies/S-EPMC12464658biostudies-literatureUnknown37(38)Over the past decade, MRAMs developments have focused on improving magnetic tunnel junctions while using magnetic electrodes with fixed properties as spin sources. Interestingly, 2D semiconductors offer interface tailoring opportunities for spin valve devices, with many atomically thin materials now available. However, integrating them with oxidation-prone spintronics materials remains a challenge. Here, spin devices are fabricated and evaluated with large-scale MoS₂ directly grown on a monocrystalline ferromagnetic spin source. While most spin transport experiments with 2D semiconductors focus on their isolated dielectric properties, the presented approach unlocks an additional spin manipulation opportunity from MoS₂ hybridization with ferromagnetic electrodes. The eAdvanced materials (Deerfield Beach, Fla.)Bimodal Spin Switch Emerging from Hybridized 2D MoS<sub>2</sub>/Ferromagnet Interfaces.PMC12464658101099139ANR-22-EXSP-0007N°40007563ANR-22-PEEL-0011881603N° 21/26-116ANR-24-EXSP-0008FR CNRS 3507N° R.8006.21N° 2.5020.11N°T.029.22FANR-11-IDEX-0003Martin MBCarretero CPetroff FCarisetti DPanciera FDlubak BPatriarche GRodary GCarre ECharlier JCDaniel JDubois SMPeiro JSeneor PCollin SWei HBrunnett FGodel FfalseBimodal Spin Switch Emerging from Hybridized 2D MoS<sub>2</sub>/Ferromagnet Interfaces.Over the past decade, MRAMs developments have focused on improving magnetic tunnel junctions while using magnetic electrodes with fixed properties as spin sources. Interestingly, 2D semiconductors offer interface tailoring opportunities for spin valve devices, with many atomically thin materials now available. However, integrating them with oxidation-prone spintronics materials remains a challenge. Here, spin devices are fabricated and evaluated with large-scale MoS₂ directly grown on a monocrystalline ferromagnetic spin source. While most spin transport experiments with 2D semiconductors focus on their isolated dielectric properties, the presented approach unlocks an additional spin manipulation opportunity from MoS₂ hybridization with ferromagnetic electrodes. The e2025-01-01T00:00:00Z2025 Sep2026-06-03T21:07:39.285Z2026-05-30T03:07:24.378ZS-EPMC124646584061180810.1002/adma.202506140