{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Guo T"],"funding":["The National Key Research and Development Program of China","The Fundamental Research Funds for the Central Universities","The Disruptive Innovation Funding Programs"],"pagination":["33664"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12480754"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["15(1)"],"pubmed_abstract":["A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (P<sub>out</sub>) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications."],"journal":["Scientific reports"],"pubmed_title":["Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient."],"pmcid":["PMC12480754"],"funding_grant_id":["2017YFF0204706","19-163-13-ZT-001-008-19","FRF-MP-18-005, and FRF-MP-19-005"],"pubmed_authors":["Li S","Ren L","Chen J","Nan B","Guo T","Wang W","Xu G"],"additional_accession":[]},"is_claimable":false,"name":"Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient.","description":"A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (P<sub>out</sub>) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Sep","modification":"2026-06-03T22:53:38.842Z","creation":"2026-05-02T03:12:14.308Z"},"accession":"S-EPMC12480754","cross_references":{"pubmed":["41023085"],"doi":["10.1038/s41598-025-18143-2"]}}