<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Guo T</submitter><funding>The National Key Research and Development Program of China</funding><funding>The Fundamental Research Funds for the Central Universities</funding><funding>The Disruptive Innovation Funding Programs</funding><pagination>33664</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12480754</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>15(1)</volume><pubmed_abstract>A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (P&lt;sub>out&lt;/sub>) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications.</pubmed_abstract><journal>Scientific reports</journal><pubmed_title>Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient.</pubmed_title><pmcid>PMC12480754</pmcid><funding_grant_id>2017YFF0204706</funding_grant_id><funding_grant_id>19-163-13-ZT-001-008-19</funding_grant_id><funding_grant_id>FRF-MP-18-005, and FRF-MP-19-005</funding_grant_id><pubmed_authors>Li S</pubmed_authors><pubmed_authors>Ren L</pubmed_authors><pubmed_authors>Chen J</pubmed_authors><pubmed_authors>Nan B</pubmed_authors><pubmed_authors>Guo T</pubmed_authors><pubmed_authors>Wang W</pubmed_authors><pubmed_authors>Xu G</pubmed_authors></additional><is_claimable>false</is_claimable><name>Output performance of Bi-Sb-Te based thermoelectric-transistor model on parallel temperature gradient.</name><description>A novel thermoelectricity-amplified transistor model based on thermoelectric (TE) materials is proposed, which synergistically integrating the Seebeck effect and bipolar junction transistor operation. The design leverages temperature gradient-induced carrier transport in a Bi-Sb-Te PNP heterojunction in lateral configuration under unidirectional thermal excitation. By combining voltage generation from the Seebeck effect (ΔT-driven) with the inherent current amplification of transistors, this self-powered device demonstrates enhanced energy conversion capabilities without requiring external bias. Numerical simulations demonstrated that under a 50 K thermal gradient, the optimized single device configuration achieves 102.14 µW output power (P&lt;sub>out&lt;/sub>) with 1.04% energy conversion efficiency (η), showcasing its viability for low-grade heat recovery applications.</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Sep</publication><modification>2026-06-03T22:53:38.842Z</modification><creation>2026-05-02T03:12:14.308Z</creation></dates><accession>S-EPMC12480754</accession><cross_references><pubmed>41023085</pubmed><doi>10.1038/s41598-025-18143-2</doi></cross_references></HashMap>