{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Dat VK"],"funding":["Ministry of Science and ICT, South Korea","National Research Foundation of Korea"],"pagination":["e00011"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12574645"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["37(43)"],"pubmed_abstract":["1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub> is synthesized and integrated with 2D-WSe<sub>2</sub> to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D-Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub>, a type-I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built-in electric field enables switching between n-p and n-n<sup>+</sup> c"],"journal":["Advanced materials (Deerfield Beach, Fla.)"],"pubmed_title":["Van der Waals Integration of 1D Nb&lt;sub&gt;2&lt;/sub&gt;Pd&lt;sub&gt;3&lt;/sub&gt;Se&lt;sub&gt;8&lt;/sub&gt; and 2D WSe&lt;sub&gt;2&lt;/sub&gt; for Gate-Tunable In-Sensor Image Processing."],"pmcid":["PMC12574645"],"funding_grant_id":["RS-2023-00236798)","RS‐2023‐00236798)","RS‐2024‐00406152","RS‐2024‐00356964","RS-2024-00406152","RS-2024-00356964"],"pubmed_authors":["Phuong DH","Jeong BJ","Dat VK","Kyhm K","Yu WJ","Vu VT","Hong C","Do VD","Choi JY","Zhang X","Nguyen MC","Taylor RA","Kim JH","Kang J","Duong NT"],"additional_accession":[]},"is_claimable":false,"name":"Van der Waals Integration of 1D Nb&lt;sub&gt;2&lt;/sub&gt;Pd&lt;sub&gt;3&lt;/sub&gt;Se&lt;sub&gt;8&lt;/sub&gt; and 2D WSe&lt;sub&gt;2&lt;/sub&gt; for Gate-Tunable In-Sensor Image Processing.","description":"1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub> is synthesized and integrated with 2D-WSe<sub>2</sub> to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D-Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub>, a type-I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built-in electric field enables switching between n-p and n-n<sup>+</sup> c","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Oct","modification":"2026-06-05T06:51:02.759Z","creation":"2026-06-04T03:06:17.703Z"},"accession":"S-EPMC12574645","cross_references":{"pubmed":["40801229"],"doi":["10.1002/adma.202500011"]}}