biostudies-literatureDat VKMinistry of Science and ICT, South KoreaNational Research Foundation of Koreae00011https://www.ebi.ac.uk/biostudies/studies/S-EPMC12574645biostudies-literatureUnknown37(43)1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-Nb₂Pd₃Se₈ is synthesized and integrated with 2D-WSe₂ to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D-Nb₂Pd₃Se₈, a type-I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built-in electric field enables switching between n-p and n-n⁺ cAdvanced materials (Deerfield Beach, Fla.)Van der Waals Integration of 1D Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub> and 2D WSe<sub>2</sub> for Gate-Tunable In-Sensor Image Processing.PMC12574645RS-2023-00236798)RS‐2023‐00236798)RS‐2024‐00406152RS‐2024‐00356964RS-2024-00406152RS-2024-00356964Phuong DHJeong BJDat VKKyhm KYu WJVu VTHong CDo VDChoi JYZhang XNguyen MCTaylor RAKim JHKang JDuong NTfalseVan der Waals Integration of 1D Nb<sub>2</sub>Pd<sub>3</sub>Se<sub>8</sub> and 2D WSe<sub>2</sub> for Gate-Tunable In-Sensor Image Processing.1D and 2D integrations provide significant promise for machine vision by enabling compact, power-efficient optoelectronic devices. However, the potential of 1D materials in mixed-dimensional structures for convolutional image processing remains largely unexplored. Here, high-quality 1D-Nb₂Pd₃Se₈ is synthesized and integrated with 2D-WSe₂ to form self-powered photodetectors, exhibiting gate-tunable bi-directional photoresponse for image processing. Utilizing the narrow band gap and favorable work function of 1D-Nb₂Pd₃Se₈, a type-I junction and 1D van der Waals interface are established with transition metal dichalcogenides. The gate tunable built-in electric field enables switching between n-p and n-n⁺ c2025-01-01T00:00:00Z2025 Oct2026-06-05T06:51:02.759Z2026-06-04T03:06:17.703ZS-EPMC125746454080122910.1002/adma.202500011