<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>17(50)</volume><submitter>Kim DW</submitter><pubmed_abstract>Mixed-dimensional heterojunctions (HJs) between compound semiconductors and transition metal dichalcogenides (TMDCs) provide a versatile platform for modulating interfacial exciton dynamics. While compound semiconductors offer precise compositional control for bandgap tuning across wide spectral ranges, they exhibit weak exciton binding energies that limit exciton stability at room temperature. Mixed-dimensional HJs address this limitation by integrating compound semiconductors with TMDCs, whose strong quantum confinement and reduced dielectric screening enable the formation of stable interlayer excitons with enhanced light-matter coupling. Here, we demonstrate a mixed-dimensional heterojunction comprising trilayer MoS&lt;sub>2&lt;/sub> interfaced with an Al&lt;sub>2&lt;/sub>O&lt;sub>3&lt;/sub>/InGaN/GaN si</pubmed_abstract><journal>ACS applied materials &amp; interfaces</journal><pagination>68265-68275</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12723632</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Observation of Interlayer Excitons in Mixed-Dimensional MoS&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; and InGaN/GaN Quantum Well Heterojunctions.</pubmed_title><pmcid>PMC12723632</pmcid><pubmed_authors>Lee S</pubmed_authors><pubmed_authors>Jeon GW</pubmed_authors><pubmed_authors>Kim KK</pubmed_authors><pubmed_authors>Lee K</pubmed_authors><pubmed_authors>Park DH</pubmed_authors><pubmed_authors>Kim JW</pubmed_authors><pubmed_authors>Jeon K</pubmed_authors><pubmed_authors>Song J</pubmed_authors><pubmed_authors>Jeong K</pubmed_authors><pubmed_authors>Kim S</pubmed_authors><pubmed_authors>Kim DW</pubmed_authors><pubmed_authors>Baek Y</pubmed_authors><pubmed_authors>Yi GC</pubmed_authors></additional><is_claimable>false</is_claimable><name>Observation of Interlayer Excitons in Mixed-Dimensional MoS&amp;lt;sub&amp;gt;2&amp;lt;/sub&amp;gt; and InGaN/GaN Quantum Well Heterojunctions.</name><description>Mixed-dimensional heterojunctions (HJs) between compound semiconductors and transition metal dichalcogenides (TMDCs) provide a versatile platform for modulating interfacial exciton dynamics. While compound semiconductors offer precise compositional control for bandgap tuning across wide spectral ranges, they exhibit weak exciton binding energies that limit exciton stability at room temperature. Mixed-dimensional HJs address this limitation by integrating compound semiconductors with TMDCs, whose strong quantum confinement and reduced dielectric screening enable the formation of stable interlayer excitons with enhanced light-matter coupling. Here, we demonstrate a mixed-dimensional heterojunction comprising trilayer MoS&lt;sub>2&lt;/sub> interfaced with an Al&lt;sub>2&lt;/sub>O&lt;sub>3&lt;/sub>/InGaN/GaN si</description><dates><release>2025-01-01T00:00:00Z</release><publication>2025 Dec</publication><modification>2026-06-08T05:04:14.038Z</modification><creation>2026-06-08T03:08:43.394Z</creation></dates><accession>S-EPMC12723632</accession><cross_references><pubmed>41251306</pubmed><doi>10.1021/acsami.5c16066</doi></cross_references></HashMap>