<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>11(1)</volume><submitter>Han J</submitter><pubmed_abstract>In this study, CGsim and liquid-encapsulated Czochralski (LEC) growth experiments were employed to handle the challenges associated with growing large-sized compound semiconductor single crystals. CGsim, a simulation software integrating the finite element method with machine learning (ML) techniques, was utilized to optimize the heat flux and crystallization front morphology at the solid-liquid interface during GaSb crystal growth. ML validation, performed across various crucible rotation speeds and crystal position (CP) configurations, enabled the optimization of the moving front shape at the solid-liquid interface, reducing the protrusion angle to 0.086°. The crystal quality of GaSb single crystal slices was evaluated through X-ray double crystal rocking curves and optical microscopy. T</pubmed_abstract><journal>ACS omega</journal><pagination>1178-1189</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12809291</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Investigating the Growth of GaSb Single Crystals through Optimized LEC Method Utilizing Finite Element Simulation and Machine Learning Techniques.</pubmed_title><pmcid>PMC12809291</pmcid><pubmed_authors>Tang K</pubmed_authors><pubmed_authors>Liu J</pubmed_authors><pubmed_authors>He Y</pubmed_authors><pubmed_authors>Li S</pubmed_authors><pubmed_authors>Xu B</pubmed_authors><pubmed_authors>Wang S</pubmed_authors><pubmed_authors>Lei Y</pubmed_authors><pubmed_authors>Han J</pubmed_authors><pubmed_authors>Hui F</pubmed_authors></additional><is_claimable>false</is_claimable><name>Investigating the Growth of GaSb Single Crystals through Optimized LEC Method Utilizing Finite Element Simulation and Machine Learning Techniques.</name><description>In this study, CGsim and liquid-encapsulated Czochralski (LEC) growth experiments were employed to handle the challenges associated with growing large-sized compound semiconductor single crystals. CGsim, a simulation software integrating the finite element method with machine learning (ML) techniques, was utilized to optimize the heat flux and crystallization front morphology at the solid-liquid interface during GaSb crystal growth. ML validation, performed across various crucible rotation speeds and crystal position (CP) configurations, enabled the optimization of the moving front shape at the solid-liquid interface, reducing the protrusion angle to 0.086°. The crystal quality of GaSb single crystal slices was evaluated through X-ray double crystal rocking curves and optical microscopy. T</description><dates><release>2026-01-01T00:00:00Z</release><publication>2026 Jan</publication><modification>2026-06-06T17:14:25.977Z</modification><creation>2026-06-03T03:09:54.064Z</creation></dates><accession>S-EPMC12809291</accession><cross_references><pubmed>41552539</pubmed><doi>10.1021/acsomega.5c08508</doi></cross_references></HashMap>