{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["17(1)"],"submitter":["Liu M"],"pubmed_abstract":["While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS<sub>2</sub> with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (L<sub>CH</sub>). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×10<sup>3</sup>, with no degradation as L<sub>CH</sub> scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm L<sub>CH</sub>, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications."],"journal":["Nature communications"],"pagination":["709"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12820094"],"repository":["biostudies-literature"],"pubmed_title":["Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide."],"pmcid":["PMC12820094"],"pubmed_authors":["Yang G","Chen K","Lu W","Nathan A","Liu M","Li L","Wu Z","Geng D","Lu N","Liao F","Zhao R","Niu J","Jiang C"],"additional_accession":[]},"is_claimable":false,"name":"Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide.","description":"While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS<sub>2</sub> with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (L<sub>CH</sub>). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×10<sup>3</sup>, with no degradation as L<sub>CH</sub> scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm L<sub>CH</sub>, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications.","dates":{"release":"2025-01-01T00:00:00Z","publication":"2025 Dec","modification":"2026-06-06T17:58:02.472Z","creation":"2026-06-04T03:10:03.19Z"},"accession":"S-EPMC12820094","cross_references":{"pubmed":["41381497"],"doi":["10.1038/s41467-025-67347-7"]}}