{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Yan B"],"funding":["Henan Province Postdoctoral Research Funding Project","National Natural Science Foundation of China","Shanghai Rising-Star Program"],"pagination":["e16349"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12904009"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(9)"],"pubmed_abstract":["The effect of Bi on the emission temperature sensitivity of GaAsBi remains a topic of debate, which hinders the design of optoelectronic devices. Band-tail states, which are critical for GaAsBi performance, are suspected to drive the discrepancy, but their effect remains unclear. This work resolves the key debate using an innovative dual-spectroscopy approach that combines temperature-dependent photoluminescence (PL) and transmission spectroscopy to decouple the contributions of band-tail states from intrinsic band-edge behavior. For GaAs<sub>1-</sub> <sub>x</sub>Bi<sub>x</sub> (x = 0.033, 0.048), the energy-temperature coefficients derived from transmission are composition-independent, while those derived from PL decrease by ≈40% with higher Bi content. This apparent contradiction originates from the thermalized carrier redistribution between the valence band and band-tail states at elevated temperatures and the intrinsic band-edge thermal sensitivity in the transmission spectra. The dual-spectroscopy approach is proven to be an effective method for clarifying the effects of band-tail states on the thermal sensitivity, and provides valuable guidance for the design of stable GaAsBi optoelectronic devices."],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Unraveling Band-Tail Effects on Temperature-Dependent Emission in GaAsBi via Photoluminescence."],"pmcid":["PMC12904009"],"funding_grant_id":["11974368","12304446","22QA1410600","61675224","12274429"],"pubmed_authors":["Wang M","Shao J","Zhu L","Wang S","Yan B","Chen X","Wang L"],"additional_accession":[]},"is_claimable":false,"name":"Unraveling Band-Tail Effects on Temperature-Dependent Emission in GaAsBi via Photoluminescence.","description":"The effect of Bi on the emission temperature sensitivity of GaAsBi remains a topic of debate, which hinders the design of optoelectronic devices. Band-tail states, which are critical for GaAsBi performance, are suspected to drive the discrepancy, but their effect remains unclear. This work resolves the key debate using an innovative dual-spectroscopy approach that combines temperature-dependent photoluminescence (PL) and transmission spectroscopy to decouple the contributions of band-tail states from intrinsic band-edge behavior. For GaAs<sub>1-</sub> <sub>x</sub>Bi<sub>x</sub> (x = 0.033, 0.048), the energy-temperature coefficients derived from transmission are composition-independent, while those derived from PL decrease by ≈40% with higher Bi content. This apparent contradiction originates from the thermalized carrier redistribution between the valence band and band-tail states at elevated temperatures and the intrinsic band-edge thermal sensitivity in the transmission spectra. The dual-spectroscopy approach is proven to be an effective method for clarifying the effects of band-tail states on the thermal sensitivity, and provides valuable guidance for the design of stable GaAsBi optoelectronic devices.","dates":{"release":"2026-01-01T00:00:00Z","publication":"2026 Feb","modification":"2026-07-09T10:25:38.636Z","creation":"2026-07-09T10:19:24.417Z"},"accession":"S-EPMC12904009","cross_references":{"pubmed":["41319274"],"doi":["10.1002/advs.202516349"]}}