{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["12(7)"],"submitter":["An J"],"pubmed_abstract":["Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO<sub>2</sub>/a-Ge stack. This restricts Ge supply to a narrow strip along the step edge, enabling nucleation and tunable QD diameters of ~25 to 150 nm, sandwiched between two epitaxially connected Si"],"journal":["Science advances"],"pagination":["eaed0335"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12904181"],"repository":["biostudies-literature"],"pubmed_title":["Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K."],"pmcid":["PMC12904181"],"pubmed_authors":["Yu L","Zhao L","Li S","Hu Z","He Z","An J","Song X","Wang J"],"additional_accession":[]},"is_claimable":false,"name":"Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K.","description":"Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO<sub>2</sub>/a-Ge stack. This restricts Ge supply to a narrow strip along the step edge, enabling nucleation and tunable QD diameters of ~25 to 150 nm, sandwiched between two epitaxially connected Si","dates":{"release":"2026-01-01T00:00:00Z","publication":"2026 Feb","modification":"2026-07-15T16:39:46.363Z","creation":"2026-07-07T03:08:36.492Z"},"accession":"S-EPMC12904181","cross_references":{"pubmed":["41686901"],"doi":["10.1126/sciadv.aed0335"]}}