<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>12(7)</volume><submitter>An J</submitter><pubmed_abstract>Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO&lt;sub>2&lt;/sub>/a-Ge stack. This restricts Ge supply to a narrow strip along the step edge, enabling nucleation and tunable QD diameters of ~25 to 150 nm, sandwiched between two epitaxially connected Si</pubmed_abstract><journal>Science advances</journal><pagination>eaed0335</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC12904181</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K.</pubmed_title><pmcid>PMC12904181</pmcid><pubmed_authors>Yu L</pubmed_authors><pubmed_authors>Zhao L</pubmed_authors><pubmed_authors>Li S</pubmed_authors><pubmed_authors>Hu Z</pubmed_authors><pubmed_authors>He Z</pubmed_authors><pubmed_authors>An J</pubmed_authors><pubmed_authors>Song X</pubmed_authors><pubmed_authors>Wang J</pubmed_authors></additional><is_claimable>false</is_claimable><name>Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K.</name><description>Precise control over quantum dot (QD) position and size is critical for quantum electronics but typically requires complex nanofabrication. Here, we report a step-confined heteroprecursor supply (sc-HPS) strategy for growth of crystalline germanium (c-Ge) QDs at predefined step edges within planar ultrathin silicon nanowire (SiNW) channels, eliminating the need for high-resolution lithography. Unlike conventional in-plane solid-liquid-solid growth using a uniform amorphous silicon precursor, sc-HPS uses a spatially confined amorphous germanium (a-Ge) layer defined by oblique patterning of a SiO&lt;sub>2&lt;/sub>/a-Ge stack. This restricts Ge supply to a narrow strip along the step edge, enabling nucleation and tunable QD diameters of ~25 to 150 nm, sandwiched between two epitaxially connected Si</description><dates><release>2026-01-01T00:00:00Z</release><publication>2026 Feb</publication><modification>2026-07-15T16:39:46.363Z</modification><creation>2026-07-07T03:08:36.492Z</creation></dates><accession>S-EPMC12904181</accession><cross_references><pubmed>41686901</pubmed><doi>10.1126/sciadv.aed0335</doi></cross_references></HashMap>