{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Zhang S"],"funding":["Innovation and Technology Commission (ITF)","Research Grants Council, University Grants Committee (RGC, UGC)","National Natural Science Foundation of China (National Science Foundation of China)"],"pagination":["1888"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12923560"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["17(1)"],"pubmed_abstract":["High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO<sub>2</sub>) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO<sub>2</sub> dielectrics on metal gates with a low leakage current of 10<sup>-6</sup> A/cm<sup>2</sup> and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensiona"],"journal":["Nature communications"],"pubmed_title":["Wafer-scale high-κ HfO&lt;sub&gt;2&lt;/sub&gt; dielectric films with sub-5-A equivalent oxide thickness for 2D MoS&lt;sub&gt;2&lt;/sub&gt; transistors."],"pmcid":["PMC12923560"],"funding_grant_id":["MRP/020/21","62341404","T42-513/24-R","62404145","62488201","12274447"],"pubmed_authors":["Zhang G","Shen C","Huang L","Liu S","Zhang S","Zhou Y","Yu H","Li N","Li X","Yang W","Zhang T","Li T","Xian L","Guo H","Wang S","Tao X","Bai L","Shi D","Cui C","Du L","Chai Y","Zheng D"],"additional_accession":[]},"is_claimable":false,"name":"Wafer-scale high-κ HfO&lt;sub&gt;2&lt;/sub&gt; dielectric films with sub-5-A equivalent oxide thickness for 2D MoS&lt;sub&gt;2&lt;/sub&gt; transistors.","description":"High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO<sub>2</sub>) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO<sub>2</sub> dielectrics on metal gates with a low leakage current of 10<sup>-6</sup> A/cm<sup>2</sup> and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensiona","dates":{"release":"2026-01-01T00:00:00Z","publication":"2026 Jan","modification":"2026-07-16T14:52:56.307Z","creation":"2026-07-09T11:03:03.279Z"},"accession":"S-EPMC12923560","cross_references":{"pubmed":["41559103"],"doi":["10.1038/s41467-026-68584-0"]}}