biostudies-literatureZhang SInnovation and Technology Commission (ITF)Research Grants Council, University Grants Committee (RGC, UGC)National Natural Science Foundation of China (National Science Foundation of China)1888https://www.ebi.ac.uk/biostudies/studies/S-EPMC12923560biostudies-literatureUnknown17(1)High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO₂) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO₂ dielectrics on metal gates with a low leakage current of 10^-6 A/cm² and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensionaNature communicationsWafer-scale high-κ HfO<sub>2</sub> dielectric films with sub-5-A equivalent oxide thickness for 2D MoS<sub>2</sub> transistors.PMC12923560MRP/020/2162341404T42-513/24-R624041456248820112274447Zhang GShen CHuang LLiu SZhang SZhou YYu HLi NLi XYang WZhang TLi TXian LGuo HWang STao XBai LShi DCui CDu LChai YZheng DfalseWafer-scale high-κ HfO<sub>2</sub> dielectric films with sub-5-A equivalent oxide thickness for 2D MoS<sub>2</sub> transistors.High-κ gate dielectrics are indispensable in modern transistor technology and play a pivotal role in efficient capacitive gating and suppression of leakage currents. However, the realization of industry-compatible high-κ gate dielectrics at a sub-5-Å equivalent oxide thickness (EOT) remains challenging. Here we report the realization of 1.3-nm thick hafnium oxide (HfO₂) dielectrics via an industry-compatible multiple oxidation atomic layer deposition process at 200 °C. A low EOT down to 2.5 Å is demonstrated for 1.3-nm thick HfO₂ dielectrics on metal gates with a low leakage current of 10^-6 A/cm² and a robust breakdown electric field of ~22.3 MV/cm. Remarkably, such low EOT high-κ/metal gates can be directly implanted into emerging two-dimensiona2026-01-01T00:00:00Z2026 Jan2026-07-16T14:52:56.307Z2026-07-09T11:03:03.279ZS-EPMC129235604155910310.1038/s41467-026-68584-0