{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Guo Z"],"funding":["Quantum Science and Technology - National Science and Technology Major Project","National Natural Science Foundation of China","China Postdoctoral Science Foundation","CAS Project for Young Scientists in Basic Research","National Key Research and Development Program of China","China Postdoctoral Science Foundation - Anhui Joint Support Program"],"pagination":["e20610"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC12948196"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["13(12)"],"pubmed_abstract":["Ferroelectric field-effect transistors (FeFETs) based on oxides with exceptional dielectric and ferroelectric properties offer compelling prospects for energy-efficient logic, nonvolatile memory, and neuromorphic computing. However, integrating high-k ferroelectrics like BaTiO<sub>3</sub> (BTO) with semiconductor channels remains challenging due to epitaxial growth constraints and poor complementary metal-oxide-semiconductor (CMOS) compatibility. Freestanding ferroelectric membranes offer a promising route for van der Waals (vdW) integration, yet practical implementation is impeded by issues such as mechanical deformation during transfer and defect-induced leakage. Here, a defect-tolerant strategy for top-gate integration of freestanding BTO membranes with MoS<sub>2</sub> channels is prese"],"journal":["Advanced science (Weinheim, Baden-Wurttemberg, Germany)"],"pubmed_title":["Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors."],"pmcid":["PMC12948196"],"funding_grant_id":["2023YFA1406404","2024M763130","2022YFA1403300","2024YFA1409003","2024T007AH","2024YFB3614103","12274090","12374094","12574187","YSBR-084","2020YFA0309100","2024ZD0300103"],"pubmed_authors":["Liu J","Shen J","Guo Z","Zhang J","Sha X","Huang G","Huang H","Shi W","Xu F","Wang L","Lan Q","Guo H","Zhao G","Zheng C","Zhang C","Mou Y","Song W"],"additional_accession":[]},"is_claimable":false,"name":"Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors.","description":"Ferroelectric field-effect transistors (FeFETs) based on oxides with exceptional dielectric and ferroelectric properties offer compelling prospects for energy-efficient logic, nonvolatile memory, and neuromorphic computing. However, integrating high-k ferroelectrics like BaTiO<sub>3</sub> (BTO) with semiconductor channels remains challenging due to epitaxial growth constraints and poor complementary metal-oxide-semiconductor (CMOS) compatibility. Freestanding ferroelectric membranes offer a promising route for van der Waals (vdW) integration, yet practical implementation is impeded by issues such as mechanical deformation during transfer and defect-induced leakage. Here, a defect-tolerant strategy for top-gate integration of freestanding BTO membranes with MoS<sub>2</sub> channels is prese","dates":{"release":"2026-01-01T00:00:00Z","publication":"2026 Feb","modification":"2026-07-16T22:26:53.659Z","creation":"2026-07-11T03:12:15.168Z"},"accession":"S-EPMC12948196","cross_references":{"pubmed":["41391050"],"doi":["10.1002/advs.202520610"]}}