<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Ye J</submitter><funding>Swiss National Science Foundation</funding><pagination>13002-6</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC3156196</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>108(32)</volume><pubmed_abstract>We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.</pubmed_abstract><journal>Proceedings of the National Academy of Sciences of the United States of America</journal><pubmed_title>Accessing the transport properties of graphene and its multilayers at high carrier density.</pubmed_title><pmcid>PMC3156196</pmcid><funding_grant_id>200021</funding_grant_id><funding_grant_id>121569</funding_grant_id><pubmed_authors>Koshino M</pubmed_authors><pubmed_authors>Inoue S</pubmed_authors><pubmed_authors>Craciun MF</pubmed_authors><pubmed_authors>Shimotani H</pubmed_authors><pubmed_authors>Yuan H</pubmed_authors><pubmed_authors>Morpurgo AF</pubmed_authors><pubmed_authors>Iwasa Y</pubmed_authors><pubmed_authors>Ye J</pubmed_authors><pubmed_authors>Russo S</pubmed_authors></additional><is_claimable>false</is_claimable><name>Accessing the transport properties of graphene and its multilayers at high carrier density.</name><description>We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric double-layer transistors to continuously tune the carrier density up to values exceeding 10(14) cm(-2). Whereas in monolayer the conductivity saturates, in bi- and trilayer filling of the higher-energy bands is observed to cause a nonmonotonic behavior of the conductivity and a large increase in the quantum capacitance. These systematic trends not only show how the intrinsic high-density transport properties of graphene can be accessed by field effect, but also demonstrate the robustness of ion-gated graphene, which is crucial for possible future applications.</description><dates><release>2011-01-01T00:00:00Z</release><publication>2011 Aug</publication><modification>2021-02-20T19:08:09Z</modification><creation>2019-03-27T03:07:58Z</creation></dates><accession>S-EPMC3156196</accession><cross_references><pubmed>21828007</pubmed><doi>10.1073/pnas.1018388108</doi></cross_references></HashMap>