<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>4</volume><submitter>Khan P</submitter><pubmed_abstract>In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35-x)Se65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe3/2 pyramidal and GeSe4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As </pubmed_abstract><journal>Scientific reports</journal><pagination>4029</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC3916963</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.</pubmed_title><pmcid>PMC3916963</pmcid><pubmed_authors>Khan P</pubmed_authors><pubmed_authors>Jain H</pubmed_authors><pubmed_authors>Adarsh KV</pubmed_authors></additional><is_claimable>false</is_claimable><name>Role of Ge:As ratio in controlling the light-induced response of a-Ge(x)As(35-x)Se65 thin films.</name><description>In this paper, we present interesting results on the quantification of photodarkening (PD), photobleaching (PB) and transient PD (TPD) in a-Ge(x)As(35-x)Se65 thin films as a function of network rigidity. Composition dependent light-induced responses of these samples indicate that there exist two parallel competing mechanisms of instantaneous PD arising from the As part of the network, and PB arising from the Ge part of the network. Raman spectra of the as-prepared and illuminated samples provide first direct evidence of the light-induced structural changes: an increase in AsSe3/2 pyramidal and GeSe4/2 corner-sharing tetrahedra units together with new Ge-O bond formation and decrease in energetically unstable edge sharing GeSe4/2 tetrahedra. Importantly, for a fixed Se concentration, Ge:As </description><dates><release>2014-01-01T00:00:00Z</release><publication>2014 Feb</publication><modification>2025-04-05T15:28:29.65Z</modification><creation>2019-03-27T01:21:25Z</creation></dates><accession>S-EPMC3916963</accession><cross_references><pubmed>24504158</pubmed><doi>10.1038/srep04029</doi></cross_references></HashMap>