{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["4"],"submitter":["Okamoto H"],"pubmed_abstract":["Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V(-1) s(-1). The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V(-1) s(-1), and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ=3.4×10(-2) cm2 V(-1) s(-1). These results verify the effectiveness of picene-(C14H29)2 for electronics applications."],"journal":["Scientific reports"],"pagination":["5048"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC4031476"],"repository":["biostudies-literature"],"pubmed_title":["Transistor application of alkyl-substituted picene."],"pmcid":["PMC4031476"],"pubmed_authors":["Okamoto H","Hamao S","Goto H","Sakai Y","Izumi M","Kubozono Y","Gohda S","Eguchi R"],"additional_accession":[]},"is_claimable":false,"name":"Transistor application of alkyl-substituted picene.","description":"Field-effect transistors (FETs) were fabricated with a thin film of 3,10-ditetradecylpicene, picene-(C14H29)2, formed using either a thermal deposition or a deposition from solution (solution process). All FETs showed p-channel normally-off characteristics. The field-effect mobility, μ, in a picene-(C14H29)2 thin-film FET with PbZr0.52Ti0.48O3 (PZT) gate dielectric reached ~21 cm2 V(-1) s(-1), which is the highest μ value recorded for organic thin-film FETs; the average μ value (<μ>) evaluated from twelve FET devices was 14(4) cm2 V(-1) s(-1). The <μ> values for picene-(C14H29)2 thin-film FETs with other gate dielectrics such as SiO2, Ta2O5, ZrO2 and HfO2 were greater than 5 cm2 V(-1) s(-1), and the lowest absolute threshold voltage, |Vth|, (5.2 V) was recorded with a PZT gate dielectric; the average |Vth| for PZT gate dielectric is 7(1) V. The solution-processed picene-(C14H29)2 FET was also fabricated with an SiO2 gate dielectric, yielding μ=3.4×10(-2) cm2 V(-1) s(-1). These results verify the effectiveness of picene-(C14H29)2 for electronics applications.","dates":{"release":"2014-01-01T00:00:00Z","publication":"2014 May","modification":"2025-04-21T20:04:46.724Z","creation":"2019-03-27T01:28:46Z"},"accession":"S-EPMC4031476","cross_references":{"pubmed":["24854436"],"doi":["10.1038/srep05048"]}}