{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["111(40)"],"submitter":["Zhou M"],"pubmed_abstract":["Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that the Si(111) surface functionalized with one-third monolayer of halogen atoms [Si(111)-√3 x √3 -X (X = Cl, Br, I)] exhibiting a trigonal superstructure provides an ideal template for epitaxial growth of heavy metals, such as Bi, which self-assemble into a hexagonal lattice with high kinetic and thermodynamic stability. Most remarkably, the Bi overlayer is atomically bonded to but electronically decoupled from the underlying Si substrate, exhibiting isolated quantum spin Ha"],"journal":["Proceedings of the National Academy of Sciences of the United States of America"],"pagination":["14378-81"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC4210051"],"repository":["biostudies-literature"],"pubmed_title":["Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface."],"pmcid":["PMC4210051"],"pubmed_authors":["Zhou M","Liu Z","Li P","Ming W","Wang Z","Liu F"],"additional_accession":[]},"is_claimable":false,"name":"Epitaxial growth of large-gap quantum spin Hall insulator on semiconductor surface.","description":"Formation of topological quantum phase on a conventional semiconductor surface is of both scientific and technological interest. Here, we demonstrate epitaxial growth of 2D topological insulator, i.e., quantum spin Hall state, on Si(111) surface with a large energy gap, based on first-principles calculations. We show that the Si(111) surface functionalized with one-third monolayer of halogen atoms [Si(111)-√3 x √3 -X (X = Cl, Br, I)] exhibiting a trigonal superstructure provides an ideal template for epitaxial growth of heavy metals, such as Bi, which self-assemble into a hexagonal lattice with high kinetic and thermodynamic stability. Most remarkably, the Bi overlayer is atomically bonded to but electronically decoupled from the underlying Si substrate, exhibiting isolated quantum spin Ha","dates":{"release":"2014-01-01T00:00:00Z","publication":"2014 Oct","modification":"2025-04-22T21:08:31.666Z","creation":"2019-03-27T01:38:22Z"},"accession":"S-EPMC4210051","cross_references":{"pubmed":["25246584"],"doi":["10.1073/pnas.1409701111"]}}