{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["5"],"submitter":["Shin HW"],"pubmed_abstract":["One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics."],"journal":["Scientific reports"],"pagination":["10764"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC4451803"],"repository":["biostudies-literature"],"pubmed_title":["Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays."],"pmcid":["PMC4451803"],"pubmed_authors":["Bae MH","Kim DG","Choi WJ","Shin HW","Lee SJ","Choi KJ","Choe JW","Shin JC","Heo J"],"additional_accession":[]},"is_claimable":false,"name":"Short-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.","description":"One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.","dates":{"release":"2015-01-01T00:00:00Z","publication":"2015 Jun","modification":"2025-04-26T08:00:17.195Z","creation":"2019-03-27T01:52:35Z"},"accession":"S-EPMC4451803","cross_references":{"pubmed":["26035286"],"doi":["10.1038/srep10764"]}}