biostudies-literatureUnknown5Shin HWOne-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.Scientific reports10764https://www.ebi.ac.uk/biostudies/studies/S-EPMC4451803biostudies-literatureShort-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.PMC4451803Bae MHKim DGChoi WJShin HWLee SJChoi KJChoe JWShin JCHeo JfalseShort-wavelength infrared photodetector on Si employing strain-induced growth of very tall InAs nanowire arrays.One-dimensional crystal growth enables the epitaxial integration of III-V compound semiconductors onto a silicon (Si) substrate despite significant lattice mismatch. Here, we report a short-wavelength infrared (SWIR, 1.4-3 μm) photodetector that employs InAs nanowires (NWs) grown on Si. The wafer-scale epitaxial InAs NWs form on the Si substrate without a metal catalyst or pattern assistance; thus, the growth is free of metal-atom-induced contaminations, and is also cost-effective. InAs NW arrays with an average height of 50 μm provide excellent anti-reflective and light trapping properties over a wide wavelength range. The photodetector exhibits a peak detectivity of 1.9 × 10(8) cm · Hz(1/2)/W for the SWIR band at 77 K and operates at temperatures as high as 220 K. The SWIR photodetector on the Si platform demonstrated in this study is promising for future low-cost optical sensors and Si photonics.2015-01-01T00:00:00Z2015 Jun2025-04-26T08:00:17.195Z2019-03-27T01:52:35ZS-EPMC44518032603528610.1038/srep10764