{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["5"],"submitter":["Caliskan D"],"pubmed_abstract":["We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device."],"journal":["Scientific reports"],"pagination":["14091"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC4566124"],"repository":["biostudies-literature"],"pubmed_title":["Chemical Visualization of a GaN p-n junction by XPS."],"pmcid":["PMC4566124"],"pubmed_authors":["Caliskan D","Ozbay E","Suzer S","Sezen H"],"additional_accession":[]},"is_claimable":false,"name":"Chemical Visualization of a GaN p-n junction by XPS.","description":"We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.","dates":{"release":"2015-01-01T00:00:00Z","publication":"2015 Sep","modification":"2024-02-15T16:15:57.357Z","creation":"2019-03-27T01:58:11Z"},"accession":"S-EPMC4566124","cross_references":{"pubmed":["26359762"],"doi":["10.1038/srep14091"]}}