<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>6</volume><submitter>Guttler M</submitter><pubmed_abstract>Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reac</pubmed_abstract><journal>Scientific reports</journal><pagination>24254</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC4823662</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Robust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2.</pubmed_title><pmcid>PMC4823662</pmcid><pubmed_authors>Chulkov EV</pubmed_authors><pubmed_authors>Kummer K</pubmed_authors><pubmed_authors>Shi M</pubmed_authors><pubmed_authors>Hoesch M</pubmed_authors><pubmed_authors>Radovic M</pubmed_authors><pubmed_authors>Kliemt K</pubmed_authors><pubmed_authors>Generalov A</pubmed_authors><pubmed_authors>Dudin P</pubmed_authors><pubmed_authors>Geibel C</pubmed_authors><pubmed_authors>Vyalikh DV</pubmed_authors><pubmed_authors>Fedorov A</pubmed_authors><pubmed_authors>Guttler M</pubmed_authors><pubmed_authors>Caroca-Canales N</pubmed_authors><pubmed_authors>Chikina A</pubmed_authors><pubmed_authors>Koroteev YM</pubmed_authors><pubmed_authors>Schulz S</pubmed_authors><pubmed_authors>Laubschat C</pubmed_authors><pubmed_authors>Danzenbacher S</pubmed_authors><pubmed_authors>Kim TK</pubmed_authors><pubmed_authors>Otrokov MM</pubmed_authors><pubmed_authors>Krellner C</pubmed_authors></additional><is_claimable>false</is_claimable><name>Robust and tunable itinerant ferromagnetism at the silicon surface of the antiferromagnet GdRh2Si2.</name><description>Spin-polarized two-dimensional electron states (2DESs) at surfaces and interfaces of magnetically active materials attract immense interest because of the idea of exploiting fermion spins rather than charge in next generation electronics. Applying angle-resolved photoelectron spectroscopy, we show that the silicon surface of GdRh2Si2 bears two distinct 2DESs, one being a Shockley surface state, and the other a Dirac surface resonance. Both are subject to strong exchange interaction with the ordered 4f-moments lying underneath the Si-Rh-Si trilayer. The spin degeneracy of the Shockley state breaks down below ~90 K, and the splitting of the resulting subbands saturates upon cooling at values as high as ~185 meV. The spin splitting of the Dirac state becomes clearly visible around ~60 K, reac</description><dates><release>2016-01-01T00:00:00Z</release><publication>2016 Apr</publication><modification>2026-04-13T17:38:38.386Z</modification><creation>2019-03-27T03:11:23Z</creation></dates><accession>S-EPMC4823662</accession><cross_references><pubmed>27052006</pubmed><doi>10.1038/srep24254</doi></cross_references></HashMap>