<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>6</volume><submitter>Zhang SF</submitter><pubmed_abstract>Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.</pubmed_abstract><journal>Scientific reports</journal><pagination>24804</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC4838865</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.</pubmed_title><pmcid>PMC4838865</pmcid><pubmed_authors>Gan WL</pubmed_authors><pubmed_authors>Zhang SF</pubmed_authors><pubmed_authors>Luo FL</pubmed_authors><pubmed_authors>Wang JB</pubmed_authors><pubmed_authors>Lew WS</pubmed_authors><pubmed_authors>Kwon J</pubmed_authors><pubmed_authors>Lim GJ</pubmed_authors></additional><is_claimable>false</is_claimable><name>Highly Efficient Domain Walls Injection in Perpendicular Magnetic Anisotropy Nanowire.</name><description>Electrical injection of magnetic domain walls in perpendicular magnetic anisotropy nanowire is crucial for data bit writing in domain wall-based magnetic memory and logic devices. Conventionally, the current pulse required to nucleate a domain wall is approximately ~10(12) A/m(2). Here, we demonstrate an energy efficient structure to inject domain walls. Under an applied electric potential, our proposed Π-shaped stripline generates a highly concentrated current distribution. This creates a highly localized magnetic field that quickly initiates the nucleation of a magnetic domain. The formation and motion of the resulting domain walls can then be electrically detected by means of Ta Hall bars across the nanowire. Our measurements show that the Π-shaped stripline can deterministically write a magnetic data bit in 15 ns even with a relatively low current density of 5.34 × 10(11) A/m(2). Micromagnetic simulations reveal the evolution of the domain nucleation - first, by the formation of a pair of magnetic bubbles, then followed by their rapid expansion into a single domain. Finally, we also demonstrate experimentally that our injection geometry can perform bit writing using only about 30% of the electrical energy as compared to a conventional injection line.</description><dates><release>2016-01-01T00:00:00Z</release><publication>2016 Apr</publication><modification>2025-04-22T20:00:41.347Z</modification><creation>2019-03-27T02:12:04Z</creation></dates><accession>S-EPMC4838865</accession><cross_references><pubmed>27098108</pubmed><doi>10.1038/srep24804</doi></cross_references></HashMap>