<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>6</volume><submitter>Moon S</submitter><pubmed_abstract>There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-o</pubmed_abstract><journal>Scientific reports</journal><pagination>30107</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC4951801</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.</pubmed_title><pmcid>PMC4951801</pmcid><pubmed_authors>Moon S</pubmed_authors><pubmed_authors>Kim K</pubmed_authors><pubmed_authors>Lee J</pubmed_authors><pubmed_authors>Kim Y</pubmed_authors><pubmed_authors>Heo J</pubmed_authors></additional><is_claimable>false</is_claimable><name>Highly efficient single-junction GaAs thin-film solar cell on flexible substrate.</name><description>There has been much interest in developing a thin-film solar cell because it is lightweight and flexible. The GaAs thin-film solar cell is a top contender in the thin-film solar cell market in that it has a high power conversion efficiency (PCE) compared to that of other thin-film solar cells. There are two common structures for the GaAs solar cell: n (emitter)-on-p (base) and p-on-n. The former performs better due to its high collection efficiency because the electron diffusion length of the p-type base region is much longer than the hole diffusion length of the n-type base region. However, it has been limited to fabricate highly efficient n-on-p single-junction GaAs thin film solar cell on a flexible substrate due to technical obstacles. We investigated a simple and fast epitaxial lift-o</description><dates><release>2016-01-01T00:00:00Z</release><publication>2016 Jul</publication><modification>2025-04-04T11:56:24.672Z</modification><creation>2019-03-27T02:18:49Z</creation></dates><accession>S-EPMC4951801</accession><cross_references><pubmed>27435899</pubmed><doi>10.1038/srep30107</doi></cross_references></HashMap>