{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["6"],"submitter":["Liu Z"],"pubmed_abstract":["A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order"],"journal":["Scientific reports"],"pagination":["32033"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC4994085"],"repository":["biostudies-literature"],"pubmed_title":["Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides."],"pmcid":["PMC4994085"],"pubmed_authors":["Fu B","Liu Z","Yi X","Li J","Huang Y","Zhang Y","Yuan G","Wang J"],"additional_accession":[]},"is_claimable":false,"name":"Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.","description":"A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order","dates":{"release":"2016-01-01T00:00:00Z","publication":"2016 Aug","modification":"2025-04-18T18:09:59.331Z","creation":"2019-03-27T02:21:14Z"},"accession":"S-EPMC4994085","cross_references":{"pubmed":["27550805"],"doi":["10.1038/srep32033"]}}