<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>6</volume><submitter>Liu Z</submitter><pubmed_abstract>A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order</pubmed_abstract><journal>Scientific reports</journal><pagination>32033</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC4994085</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.</pubmed_title><pmcid>PMC4994085</pmcid><pubmed_authors>Fu B</pubmed_authors><pubmed_authors>Liu Z</pubmed_authors><pubmed_authors>Yi X</pubmed_authors><pubmed_authors>Li J</pubmed_authors><pubmed_authors>Huang Y</pubmed_authors><pubmed_authors>Zhang Y</pubmed_authors><pubmed_authors>Yuan G</pubmed_authors><pubmed_authors>Wang J</pubmed_authors></additional><is_claimable>false</is_claimable><name>Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.</name><description>A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order</description><dates><release>2016-01-01T00:00:00Z</release><publication>2016 Aug</publication><modification>2025-04-18T18:09:59.331Z</modification><creation>2019-03-27T02:21:14Z</creation></dates><accession>S-EPMC4994085</accession><cross_references><pubmed>27550805</pubmed><doi>10.1038/srep32033</doi></cross_references></HashMap>