<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Patel M</submitter><funding>Incheon National University</funding><funding>Ministry of Education</funding><funding>Ministry of Science, ICT and Future Planning</funding><funding>National Research Foundation of Korea</funding><pagination>206-212</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC5545874</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>14</volume><pubmed_abstract>In this data article, vertically grown SnS layers were investigated. The growth processes of vertical SnS layers were discussed in our article [1]. This data article provides the chemical analysis using the XPS measurements for the SnS sample grown on a Si wafer. Deposition time varying SnS morphology changes were observed by FESEM. The cross-sectional images were achieved to monitor the SnS layer thickness. Refractive index of the grown SnS film was calculated using the reflectance data. A self-operating photoelectric was realized with structuring of SnS layers on the n-type Si wafer. Transient photoresponses were achieved by tuning the switching frequencies.</pubmed_abstract><journal>Data in brief</journal><pubmed_title>Physical, chemical, and optical data of SnS layers and light switching frequency dependent photoresponses.</pubmed_title><pmcid>PMC5545874</pmcid><funding_grant_id>NRF-2015R1D1A1A01059165</funding_grant_id><funding_grant_id>NRF-2015H1D3A1066311</funding_grant_id><pubmed_authors>Kim HS</pubmed_authors><pubmed_authors>Kim J</pubmed_authors><pubmed_authors>Patel M</pubmed_authors></additional><is_claimable>false</is_claimable><name>Physical, chemical, and optical data of SnS layers and light switching frequency dependent photoresponses.</name><description>In this data article, vertically grown SnS layers were investigated. The growth processes of vertical SnS layers were discussed in our article [1]. This data article provides the chemical analysis using the XPS measurements for the SnS sample grown on a Si wafer. Deposition time varying SnS morphology changes were observed by FESEM. The cross-sectional images were achieved to monitor the SnS layer thickness. Refractive index of the grown SnS film was calculated using the reflectance data. A self-operating photoelectric was realized with structuring of SnS layers on the n-type Si wafer. Transient photoresponses were achieved by tuning the switching frequencies.</description><dates><release>2017-01-01T00:00:00Z</release><publication>2017 Oct</publication><modification>2025-04-26T08:50:43.327Z</modification><creation>2019-03-27T02:52:48Z</creation></dates><accession>S-EPMC5545874</accession><cross_references><pubmed>28795099</pubmed><doi>10.1016/j.dib.2017.07.056</doi></cross_references></HashMap>