{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["7(1)"],"submitter":["Samanta S"],"pubmed_abstract":["Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO<sub>x</sub> film in a simple W/GeO<sub>x</sub>/W structure and understanding of switching mechanism through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine sensing (or changing Ge°/Ge<sup>4+</sup> oxidation states under external bias) have been reported for the first time. Oxidation states of Ge<sup>0</sup>/Ge<sup>4+</sup> are confirmed by both XPS and H<sub>2</sub>O<sub>2</sub> sensing of GeO<sub>x</sub> membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10<sup>6</sup> cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO<sub>x</sub> laye"],"journal":["Scientific reports"],"pagination":["11240"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC5593955"],"repository":["biostudies-literature"],"pubmed_title":["Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detection."],"pmcid":["PMC5593955"],"pubmed_authors":["Rahaman SZ","Cheng HM","Prakash A","Roy A","Ginnaram S","Jana S","Maikap S","Tsai LN","Ray SK","Roy S","Qiu JT","Dutta M","Chakrabarti S","Panja R","Samanta S"],"additional_accession":[]},"is_claimable":false,"name":"Understanding of multi-level resistive switching mechanism in GeO<sub>x</sub> through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine prostate cancer biomarker detection.","description":"Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO<sub>x</sub> film in a simple W/GeO<sub>x</sub>/W structure and understanding of switching mechanism through redox reaction in H<sub>2</sub>O<sub>2</sub>/sarcosine sensing (or changing Ge°/Ge<sup>4+</sup> oxidation states under external bias) have been reported for the first time. Oxidation states of Ge<sup>0</sup>/Ge<sup>4+</sup> are confirmed by both XPS and H<sub>2</sub>O<sub>2</sub> sensing of GeO<sub>x</sub> membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10<sup>6</sup> cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO<sub>x</sub> laye","dates":{"release":"2017-01-01T00:00:00Z","publication":"2017 Sep","modification":"2025-04-04T01:34:10.035Z","creation":"2019-03-27T02:56:03Z"},"accession":"S-EPMC5593955","cross_references":{"pubmed":["28894240"],"doi":["10.1038/s41598-017-11657-4"]}}