biostudies-literatureUnknown7(1)Samanta SFormation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO_x film in a simple W/GeO_x/W structure and understanding of switching mechanism through redox reaction in H₂O₂/sarcosine sensing (or changing Ge°/Ge⁴⁺ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge⁰/Ge⁴⁺ are confirmed by both XPS and H₂O₂ sensing of GeO_x membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10⁶ cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO_x layeScientific reports11240https://www.ebi.ac.uk/biostudies/studies/S-EPMC5593955biostudies-literatureUnderstanding of multi-level resistive switching mechanism in GeO_x through redox reaction in H₂O₂/sarcosine prostate cancer biomarker detection.PMC5593955Rahaman SZCheng HMPrakash ARoy AGinnaram SJana SMaikap STsai LNRay SKRoy SQiu JTDutta MChakrabarti SPanja RSamanta SfalseUnderstanding of multi-level resistive switching mechanism in GeO_x through redox reaction in H₂O₂/sarcosine prostate cancer biomarker detection.Formation-free multi-level resistive switching characteristics by using 10 nm-thick polycrystalline GeO_x film in a simple W/GeO_x/W structure and understanding of switching mechanism through redox reaction in H₂O₂/sarcosine sensing (or changing Ge°/Ge⁴⁺ oxidation states under external bias) have been reported for the first time. Oxidation states of Ge⁰/Ge⁴⁺ are confirmed by both XPS and H₂O₂ sensing of GeO_x membrane in electrolyte-insulator-semiconductor structure. Highly repeatable 1000 dc cycles and stable program/erase (P/E) endurance of >10⁶ cycles at a small pulse width of 100 ns are achieved at a low operation current of 0.1 µA. The thickness of GeO_x laye2017-01-01T00:00:00Z2017 Sep2025-04-04T01:34:10.035Z2019-03-27T02:56:03ZS-EPMC55939552889424010.1038/s41598-017-11657-4