{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Park JH"],"funding":["HPC Wales","LEAST-STARnet/MARCO/DARPA/SRC NRI SWAN","National Science Foundation"],"pagination":["e1701661"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC5650486"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["3(10)"],"pubmed_abstract":["Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS<sub>2</sub> is investigated as a defect passivation method. A strong negative charge transfer from MoS<sub>2</sub> to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> in back-gated MoS<sub>2</sub> transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS<sub>2</sub>. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex."],"journal":["Science advances"],"pubmed_title":["Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface."],"pmcid":["PMC5650486"],"funding_grant_id":["HPCW0285","award340454","award340456","award340455","DMR 1207213"],"pubmed_authors":["Amani M","Park JH","Sanne A","Zhang K","Banerjee SK","Guo Y","Javey A","Robertson J","Movva HCP","Robinson JA","Kummel AC"],"additional_accession":[]},"is_claimable":false,"name":"Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.","description":"Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS<sub>2</sub> is investigated as a defect passivation method. A strong negative charge transfer from MoS<sub>2</sub> to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the <i>I</i><sub>ON</sub>/<i>I</i><sub>OFF</sub> in back-gated MoS<sub>2</sub> transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS<sub>2</sub>. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.","dates":{"release":"2017-01-01T00:00:00Z","publication":"2017 Oct","modification":"2026-05-06T00:23:33.567Z","creation":"2019-03-27T02:59:32Z"},"accession":"S-EPMC5650486","cross_references":{"pubmed":["29062892"],"doi":["10.1126/sciadv.1701661"]}}