<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Park JH</submitter><funding>HPC Wales</funding><funding>LEAST-STARnet/MARCO/DARPA/SRC NRI SWAN</funding><funding>National Science Foundation</funding><pagination>e1701661</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC5650486</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>3(10)</volume><pubmed_abstract>Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS&lt;sub>2&lt;/sub> is investigated as a defect passivation method. A strong negative charge transfer from MoS&lt;sub>2&lt;/sub> to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the &lt;i>I&lt;/i>&lt;sub>ON&lt;/sub>/&lt;i>I&lt;/i>&lt;sub>OFF&lt;/sub> in back-gated MoS&lt;sub>2&lt;/sub> transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS&lt;sub>2&lt;/sub>. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.</pubmed_abstract><journal>Science advances</journal><pubmed_title>Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.</pubmed_title><pmcid>PMC5650486</pmcid><funding_grant_id>HPCW0285</funding_grant_id><funding_grant_id>award340454</funding_grant_id><funding_grant_id>award340456</funding_grant_id><funding_grant_id>award340455</funding_grant_id><funding_grant_id>DMR 1207213</funding_grant_id><pubmed_authors>Amani M</pubmed_authors><pubmed_authors>Park JH</pubmed_authors><pubmed_authors>Sanne A</pubmed_authors><pubmed_authors>Zhang K</pubmed_authors><pubmed_authors>Banerjee SK</pubmed_authors><pubmed_authors>Guo Y</pubmed_authors><pubmed_authors>Javey A</pubmed_authors><pubmed_authors>Robertson J</pubmed_authors><pubmed_authors>Movva HCP</pubmed_authors><pubmed_authors>Robinson JA</pubmed_authors><pubmed_authors>Kummel AC</pubmed_authors></additional><is_claimable>false</is_claimable><name>Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.</name><description>Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS&lt;sub>2&lt;/sub> is investigated as a defect passivation method. A strong negative charge transfer from MoS&lt;sub>2&lt;/sub> to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the &lt;i>I&lt;/i>&lt;sub>ON&lt;/sub>/&lt;i>I&lt;/i>&lt;sub>OFF&lt;/sub> in back-gated MoS&lt;sub>2&lt;/sub> transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS&lt;sub>2&lt;/sub>. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.</description><dates><release>2017-01-01T00:00:00Z</release><publication>2017 Oct</publication><modification>2026-05-06T00:23:33.567Z</modification><creation>2019-03-27T02:59:32Z</creation></dates><accession>S-EPMC5650486</accession><cross_references><pubmed>29062892</pubmed><doi>10.1126/sciadv.1701661</doi></cross_references></HashMap>