{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["8(1)"],"submitter":["Shih CW"],"pubmed_abstract":["High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ <sub>FE</sub> ) of 7.6 cm<sup>2</sup>/Vs, 140 mV/dec subthreshold slope, and 3 × 10<sup>4</sup> on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ <sub>FE</sub> , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ <sub>FE</sub> of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits."],"journal":["Scientific reports"],"pagination":["889"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC5772488"],"repository":["biostudies-literature"],"pubmed_title":["Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors."],"pmcid":["PMC5772488"],"pubmed_authors":["Shih CW","Chin A","Su WF","Lu CF"],"additional_accession":[]},"is_claimable":false,"name":"Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.","description":"High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ <sub>FE</sub> ) of 7.6 cm<sup>2</sup>/Vs, 140 mV/dec subthreshold slope, and 3 × 10<sup>4</sup> on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ <sub>FE</sub> , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ <sub>FE</sub> of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.","dates":{"release":"2018-01-01T00:00:00Z","publication":"2018 Jan","modification":"2025-04-04T20:43:32.745Z","creation":"2019-03-26T22:58:35Z"},"accession":"S-EPMC5772488","cross_references":{"pubmed":["29343726"],"doi":["10.1038/s41598-017-17066-x"]}}