<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>8(1)</volume><submitter>Shih CW</submitter><pubmed_abstract>High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ &lt;sub>FE&lt;/sub> ) of 7.6 cm&lt;sup>2&lt;/sup>/Vs, 140 mV/dec subthreshold slope, and 3 × 10&lt;sup>4&lt;/sup> on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ &lt;sub>FE&lt;/sub> , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ &lt;sub>FE&lt;/sub> of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.</pubmed_abstract><journal>Scientific reports</journal><pagination>889</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC5772488</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.</pubmed_title><pmcid>PMC5772488</pmcid><pubmed_authors>Shih CW</pubmed_authors><pubmed_authors>Chin A</pubmed_authors><pubmed_authors>Su WF</pubmed_authors><pubmed_authors>Lu CF</pubmed_authors></additional><is_claimable>false</is_claimable><name>Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors.</name><description>High performance p-type thin-film transistor (p-TFT) was realized by a simple process of reactive sputtering from a tin (Sn) target under oxygen ambient, where remarkably high field-effect mobility (μ &lt;sub>FE&lt;/sub> ) of 7.6 cm&lt;sup>2&lt;/sup>/Vs, 140 mV/dec subthreshold slope, and 3 × 10&lt;sup>4&lt;/sup> on-current/off-current were measured. In sharp contrast, the SnO formed by direct sputtering from a SnO target showed much degraded μ &lt;sub>FE&lt;/sub> , because of the limited low process temperature of SnO and sputtering damage. From the first principle quantum-mechanical calculation, the high hole μ &lt;sub>FE&lt;/sub> of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.</description><dates><release>2018-01-01T00:00:00Z</release><publication>2018 Jan</publication><modification>2025-04-04T20:43:32.745Z</modification><creation>2019-03-26T22:58:35Z</creation></dates><accession>S-EPMC5772488</accession><cross_references><pubmed>29343726</pubmed><doi>10.1038/s41598-017-17066-x</doi></cross_references></HashMap>