{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["8(1)"],"submitter":["Kim YG"],"pubmed_abstract":["We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm."],"journal":["Scientific reports"],"pagination":["5546"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC5882893"],"repository":["biostudies-literature"],"pubmed_title":["Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors."],"pmcid":["PMC5882893"],"pubmed_authors":["Kim WG","Kim HJ","Kim YG","Yoo H","Tak YJ"],"additional_accession":[]},"is_claimable":false,"name":"Facile fabrication of wire-type indium gallium zinc oxide thin-film transistors applicable to ultrasensitive flexible sensors.","description":"We fabricated wire-type indium gallium zinc oxide (IGZO) thin-film transistors (TFTs) using a self-formed cracked template based on a lift-off process. The electrical characteristics of wire-type IGZO TFTs could be controlled by changing the width and density of IGZO wires through varying the coating conditions of template solution or multi-stacking additional layers. The fabricated wire-type devices were applied to sensors after functionalizing the surface. The wire-type pH sensor showed a sensitivity of 45.4 mV/pH, and this value was an improved sensitivity compared with that of the film-type device (27.6 mV/pH). Similarly, when the wire-type device was used as a glucose sensor, it showed more variation in electrical characteristics than the film-type device. The improved sensing properties resulted from the large surface area of the wire-type device compared with that of the film-type device. In addition, we fabricated wire-type IGZO TFTs on flexible substrates and confirmed that such structures were very resistant to mechanical stresses at a bending radius of 10 mm.","dates":{"release":"2018-01-01T00:00:00Z","publication":"2018 Apr","modification":"2025-05-18T12:42:58.683Z","creation":"2025-05-18T12:42:58.683Z"},"accession":"S-EPMC5882893","cross_references":{"pubmed":["29615757"],"doi":["10.1038/s41598-018-23892-4"]}}