{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Morais Faustino BM"],"funding":["European Research Council"],"pagination":["6867"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC5932081"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["8(1)"],"pubmed_abstract":["Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10<sup>4</sup> Sm<sup>-1</sup>) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermal"],"journal":["Scientific reports"],"pubmed_title":["CuI p-type thin films for highly transparent thermoelectric p-n modules."],"pmcid":["PMC5932081"],"funding_grant_id":["647596"],"pubmed_authors":["Marques A","Almeida A","Morais Faustino BM","Gomes D","Bianchi C","Faria J","Gaspar G","Tittonen I","Ferreira I","Juntunen T"],"additional_accession":[]},"is_claimable":false,"name":"CuI p-type thin films for highly transparent thermoelectric p-n modules.","description":"Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10<sup>4</sup> Sm<sup>-1</sup>) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermal","dates":{"release":"2018-01-01T00:00:00Z","publication":"2018 May","modification":"2026-05-05T21:49:23.699Z","creation":"2019-03-26T23:36:43Z"},"accession":"S-EPMC5932081","cross_references":{"pubmed":["29720663"],"doi":["10.1038/s41598-018-25106-3"]}}