<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Morais Faustino BM</submitter><funding>European Research Council</funding><pagination>6867</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC5932081</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>8(1)</volume><pubmed_abstract>Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10&lt;sup>4&lt;/sup> Sm&lt;sup>-1&lt;/sup>) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermal</pubmed_abstract><journal>Scientific reports</journal><pubmed_title>CuI p-type thin films for highly transparent thermoelectric p-n modules.</pubmed_title><pmcid>PMC5932081</pmcid><funding_grant_id>647596</funding_grant_id><pubmed_authors>Marques A</pubmed_authors><pubmed_authors>Almeida A</pubmed_authors><pubmed_authors>Morais Faustino BM</pubmed_authors><pubmed_authors>Gomes D</pubmed_authors><pubmed_authors>Bianchi C</pubmed_authors><pubmed_authors>Faria J</pubmed_authors><pubmed_authors>Gaspar G</pubmed_authors><pubmed_authors>Tittonen I</pubmed_authors><pubmed_authors>Ferreira I</pubmed_authors><pubmed_authors>Juntunen T</pubmed_authors></additional><is_claimable>false</is_claimable><name>CuI p-type thin films for highly transparent thermoelectric p-n modules.</name><description>Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials - a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 10&lt;sup>4&lt;/sup> Sm&lt;sup>-1&lt;/sup>) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermal</description><dates><release>2018-01-01T00:00:00Z</release><publication>2018 May</publication><modification>2026-05-05T21:49:23.699Z</modification><creation>2019-03-26T23:36:43Z</creation></dates><accession>S-EPMC5932081</accession><cross_references><pubmed>29720663</pubmed><doi>10.1038/s41598-018-25106-3</doi></cross_references></HashMap>