biostudies-literatureUnknown10(4)Shoaib MThe controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS x Se1-x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS x Se1-x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS x Se1-x NWs possess smooth surface and uniform diameter. The aligned CdS x Se1-x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS x Se1-x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W-1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.Nano-micro letters58https://www.ebi.ac.uk/biostudies/studies/S-EPMC6199103biostudies-literatureControllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors.PMC6199103Shoaib MZhang XWang XPan AZhang QfalseControllable Vapor Growth of Large-Area Aligned CdS x Se1-x Nanowires for Visible Range Integratable Photodetectors.The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS x Se1-x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS x Se1-x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS x Se1-x NWs possess smooth surface and uniform diameter. The aligned CdS x Se1-x NWs have strong photoluminescence and high-quality optical waveguide emission covering almost the entire visible wavelength range. Furthermore, photodetectors were constructed based on individual alloyed CdS x Se1-x NWs. These devices exhibit high performance and fast response speed with photoresponsivity ~ 670 A W-1 and photoresponse time ~ 76 ms. Present work provides a straightforward way to realize in-plane aligned bandgap engineering in semiconductor NWs for the development of large area NW arrays, which exhibit promising applications in future optoelectronic integrated circuits.2018-01-01T00:00:00Z20182024-12-04T01:12:12.297Z2019-03-27T00:09:35ZS-EPMC61991033039370610.1007/s40820-018-0211-7