<HashMap><database>biostudies-literature</database><scores/><additional><omics_type>Unknown</omics_type><volume>8</volume><submitter>Wei Y</submitter><pubmed_abstract>Phosphor-converted white-light-emitting diodes (pc-WLED) have been extensively employed as solid-state lighting sources, which have a very important role in people's daily lives. However, due to the scarcity of the red component, it is difficult to realize warm white light efficiently. Hence, red-emitting phosphors are urgently required for improving the illumination quality. In this work, we develop a novel orangish-red La4GeO8:Bi3+ phosphor, the emission peak of which is located at 600 nm under near-ultraviolet (n-UV) light excitation. The full width at half maximum (fwhm) is 103 nm, the internal quantum efficiency (IQE) exceeds 88%, and the external quantum efficiency (EQE) is 69%. According to Rietveld refinement analysis and density functional theory (DFT) calculations, Bi3+ ions randomly occupy all La sites in orthorhombic La4GeO8. Importantly, the oxygen-vacancy-induced electronic localization around the Bi3+ ions is the main reason for the highly efficient orangish-red luminescence. These results provide a new perspective and insight from the local electron structure for designing inorganic phosphor materials that realize the unique luminescence performance of Bi3+ ions.</pubmed_abstract><journal>Light, science &amp; applications</journal><pagination>15</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC6351663</full_dataset_link><repository>biostudies-literature</repository><pubmed_title>New strategy for designing orangish-red-emitting phosphor via oxygen-vacancy-induced electronic localization.</pubmed_title><pmcid>PMC6351663</pmcid><pubmed_authors>Li G</pubmed_authors><pubmed_authors>Liang S</pubmed_authors><pubmed_authors>Liu K</pubmed_authors><pubmed_authors>Xing G</pubmed_authors><pubmed_authors>Dang P</pubmed_authors><pubmed_authors>Liu M</pubmed_authors><pubmed_authors>Jin D</pubmed_authors><pubmed_authors>Lin J</pubmed_authors><pubmed_authors>Wei Y</pubmed_authors><pubmed_authors>Cheng Z</pubmed_authors></additional><is_claimable>false</is_claimable><name>New strategy for designing orangish-red-emitting phosphor via oxygen-vacancy-induced electronic localization.</name><description>Phosphor-converted white-light-emitting diodes (pc-WLED) have been extensively employed as solid-state lighting sources, which have a very important role in people's daily lives. However, due to the scarcity of the red component, it is difficult to realize warm white light efficiently. Hence, red-emitting phosphors are urgently required for improving the illumination quality. In this work, we develop a novel orangish-red La4GeO8:Bi3+ phosphor, the emission peak of which is located at 600 nm under near-ultraviolet (n-UV) light excitation. The full width at half maximum (fwhm) is 103 nm, the internal quantum efficiency (IQE) exceeds 88%, and the external quantum efficiency (EQE) is 69%. According to Rietveld refinement analysis and density functional theory (DFT) calculations, Bi3+ ions randomly occupy all La sites in orthorhombic La4GeO8. Importantly, the oxygen-vacancy-induced electronic localization around the Bi3+ ions is the main reason for the highly efficient orangish-red luminescence. These results provide a new perspective and insight from the local electron structure for designing inorganic phosphor materials that realize the unique luminescence performance of Bi3+ ions.</description><dates><release>2019-01-01T00:00:00Z</release><publication>2019</publication><modification>2025-04-18T15:15:33.507Z</modification><creation>2019-03-26T22:50:29Z</creation></dates><accession>S-EPMC6351663</accession><cross_references><pubmed>30728955</pubmed><doi>10.1038/s41377-019-0126-1</doi></cross_references></HashMap>