{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"omics_type":["Unknown"],"volume":["9(1)"],"submitter":["Wiesner M"],"pubmed_abstract":["A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi<sub>2</sub>Te<sub>3</sub> TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi<sub>2</sub>Te<sub>3</sub> and the substrate. We confirm the symmetry breaking in Bi<sub>2</sub>Te<sub>3</sub> via the emergence of the Raman-forbidden [Formula: see text] mode. Our results suggest that topological surface states can exist at the Bi<sub>2</sub>Te<sub>3</sub>/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures."],"journal":["Scientific reports"],"pagination":["6147"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC6468116"],"repository":["biostudies-literature"],"pubmed_title":["The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi<sub>2</sub>Te<sub>3</sub>."],"pmcid":["PMC6468116"],"pubmed_authors":["Lin JF","Duffy LB","Wiesner M","Akinwande D","Wang S","Hesjedal T","Jenczyk J","Mroz B","Jurga S","Roberts RH","Song Y"],"additional_accession":[]},"is_claimable":false,"name":"The effect of substrate and surface plasmons on symmetry breaking at the substrate interface of the topological insulator Bi<sub>2</sub>Te<sub>3</sub>.","description":"A pressing challenge in engineering devices with topological insulators (TIs) is that electron transport is dominated by the bulk conductance, and so dissipationless surface states account for only a small fraction of the conductance. Enhancing the surface-to-volume ratio is a common method to enhance the relative contribution of such states. In thin films with reduced thickness, the confinement results in symmetry-breaking and is critical for the experimental observation of topologically protected surface states. We employ micro-Raman and tip-enhanced Raman spectroscopy to examine three different mechanisms of symmetry breaking in Bi<sub>2</sub>Te<sub>3</sub> TI thin films: surface plasmon generation, charge transfer, and application of a periodic strain potential. These mechanisms are facilitated by semiconducting and insulating substrates that modify the electronic and mechanical conditions at the sample surface and alter the long-range interactions between Bi<sub>2</sub>Te<sub>3</sub> and the substrate. We confirm the symmetry breaking in Bi<sub>2</sub>Te<sub>3</sub> via the emergence of the Raman-forbidden [Formula: see text] mode. Our results suggest that topological surface states can exist at the Bi<sub>2</sub>Te<sub>3</sub>/substrate interface, which is in a good agreement with previous theoretical results predicting the tunability of the vertical location of helical surface states in TI/substrate heterostructures.","dates":{"release":"2019-01-01T00:00:00Z","publication":"2019 Apr","modification":"2024-02-15T08:43:21.46Z","creation":"2019-06-06T22:46:38Z"},"accession":"S-EPMC6468116","cross_references":{"pubmed":["30992498"],"doi":["10.1038/s41598-019-42598-9"]}}