<HashMap><database>biostudies-literature</database><scores><citationCount>0</citationCount><reanalysisCount>0</reanalysisCount><viewCount>44</viewCount><searchCount>0</searchCount></scores><additional><submitter>Liang J</submitter><funding>Air Force Office of Scientific Research</funding><funding>National Science Foundation</funding><pagination>E1089</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC7084918</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>13(5)</volume><pubmed_abstract>A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature &lt; Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T &lt; Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.</pubmed_abstract><journal>Materials (Basel, Switzerland)</journal><pubmed_title>Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions.</pubmed_title><pmcid>PMC7084918</pmcid><funding_grant_id>NSF-DMR-EPM 1607935</funding_grant_id><funding_grant_id>FA9550-19-1-0196</funding_grant_id><pubmed_authors>Xu K</pubmed_authors><pubmed_authors>Fullerton-Shirey SK</pubmed_authors><pubmed_authors>Liang J</pubmed_authors><pubmed_authors>Laaser JE</pubmed_authors><pubmed_authors>Arora S</pubmed_authors><view_count>44</view_count></additional><is_claimable>false</is_claimable><name>Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions.</name><description>A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO4, is locked by thermal quenching (i.e., operating temperature &lt; Tg (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO4 gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T &lt; Tg. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.</description><dates><release>2020-01-01T00:00:00Z</release><publication>2020 Mar</publication><modification>2024-11-14T14:09:48.755Z</modification><creation>2020-05-22T14:08:21Z</creation></dates><accession>S-EPMC7084918</accession><cross_references><pubmed>32121528</pubmed><doi>10.3390/ma13051089</doi></cross_references></HashMap>