{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Sistani M"],"funding":["Austrian Science Fund FWF","European Research Council","Campus France","Agence Nationale de la Recherche","LABoratoires d'EXcellence ARCANE","Engineering and Physical Sciences Research Council"],"pagination":["1642-1648"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC7366502"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["7(7)"],"pubmed_abstract":["Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photocatalysis, and photodetection. However, a detailed understanding of plasmonic hot carrier generation and, particularly, the transfer at metal-semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal-semiconductor (Al-Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal-semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al-Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge, leading to negative differential resistance."],"journal":["ACS photonics"],"pubmed_title":["Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions."],"pmcid":["PMC7366502"],"funding_grant_id":["EP/M013812/1","P29729-N27","758385","35592PB","EP/I004343/1","ANR-12-JS10-0002","ANR-10-LABX-51-01","P 29729"],"pubmed_authors":["Lugstein A","Den Hertog MI","Sistani M","Momtaz ZS","Keshmiri H","Bartmann MG","Luong MA","Gusken NA","Oulton RF"],"additional_accession":[]},"is_claimable":false,"name":"Plasmon-Driven Hot Electron Transfer at Atomically Sharp Metal-Semiconductor Nanojunctions.","description":"Recent advances in guiding and localizing light at the nanoscale exposed the enormous potential of ultrascaled plasmonic devices. In this context, the decay of surface plasmons to hot carriers triggers a variety of applications in boosting the efficiency of energy-harvesting, photocatalysis, and photodetection. However, a detailed understanding of plasmonic hot carrier generation and, particularly, the transfer at metal-semiconductor interfaces is still elusive. In this paper, we introduce a monolithic metal-semiconductor (Al-Ge) heterostructure device, providing a platform to examine surface plasmon decay and hot electron transfer at an atomically sharp Schottky nanojunction. The gated metal-semiconductor heterojunction device features electrostatic control of the Schottky barrier height at the Al-Ge interface, enabling hot electron filtering. The ability of momentum matching and to control the energy distribution of plasmon-driven hot electron injection is demonstrated by controlling the interband electron transfer in Ge, leading to negative differential resistance.","dates":{"release":"2020-01-01T00:00:00Z","publication":"2020 Jul","modification":"2025-04-05T13:48:27.753Z","creation":"2025-04-05T13:48:27.753Z"},"accession":"S-EPMC7366502","cross_references":{"pubmed":["32685608"],"doi":["10.1021/acsphotonics.0c00557"]}}