{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Dory JB"],"funding":["Agence Nationale de la Recherche","Conseil régional de Bourgogne-Franche-Comté","Agence Nationale de la Recherche (French National Research Agency)","Conseil régional de Bourgogne-Franche-Comté (Regional Council of Burgundy)"],"pagination":["11894"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC7367863"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["10(1)"],"pubmed_abstract":["Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb<sub>w</sub>S<sub>x</sub>Se<sub>y</sub>Te<sub>z</sub> chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrare"],"journal":["Scientific reports"],"pubmed_title":["Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices."],"pmcid":["PMC7367863"],"funding_grant_id":["EIPHI Graduate School ANR-17-EURE-0002","FEDER Program"],"pubmed_authors":["Castro-Chavarria C","Jager JB","Fedeli JM","Bernard M","Tessaire M","Dory JB","Cluzel B","Coillet A","Noe P","Verdy A","Sabbione C"],"additional_accession":[]},"is_claimable":false,"name":"Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.","description":"Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb<sub>w</sub>S<sub>x</sub>Se<sub>y</sub>Te<sub>z</sub> chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrare","dates":{"release":"2020-01-01T00:00:00Z","publication":"2020 Jul","modification":"2025-04-04T13:38:33.546Z","creation":"2025-04-04T13:38:33.546Z"},"accession":"S-EPMC7367863","cross_references":{"pubmed":["32681142"],"doi":["10.1038/s41598-020-67377-9"]}}