<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Dory JB</submitter><funding>Agence Nationale de la Recherche</funding><funding>Conseil régional de Bourgogne-Franche-Comté</funding><funding>Agence Nationale de la Recherche (French National Research Agency)</funding><funding>Conseil régional de Bourgogne-Franche-Comté (Regional Council of Burgundy)</funding><pagination>11894</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC7367863</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>10(1)</volume><pubmed_abstract>Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb&lt;sub>w&lt;/sub>S&lt;sub>x&lt;/sub>Se&lt;sub>y&lt;/sub>Te&lt;sub>z&lt;/sub> chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrare</pubmed_abstract><journal>Scientific reports</journal><pubmed_title>Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.</pubmed_title><pmcid>PMC7367863</pmcid><funding_grant_id>EIPHI Graduate School ANR-17-EURE-0002</funding_grant_id><funding_grant_id>FEDER Program</funding_grant_id><pubmed_authors>Castro-Chavarria C</pubmed_authors><pubmed_authors>Jager JB</pubmed_authors><pubmed_authors>Fedeli JM</pubmed_authors><pubmed_authors>Bernard M</pubmed_authors><pubmed_authors>Tessaire M</pubmed_authors><pubmed_authors>Dory JB</pubmed_authors><pubmed_authors>Cluzel B</pubmed_authors><pubmed_authors>Coillet A</pubmed_authors><pubmed_authors>Noe P</pubmed_authors><pubmed_authors>Verdy A</pubmed_authors><pubmed_authors>Sabbione C</pubmed_authors></additional><is_claimable>false</is_claimable><name>Ge-Sb-S-Se-Te amorphous chalcogenide thin films towards on-chip nonlinear photonic devices.</name><description>Thanks to their unique optical properties Ge-Sb-S-Se-Te amorphous chalcogenide materials and compounds offer tremendous opportunities of applications, in particular in near and mid-infrared range. This spectral range is for instance of high interest for photonics or optical sensors. Using co-sputtering technique of chalcogenide compound targets in a 200 mm industrial deposition tool, we show how by modifying the amorphous structure of GeSb&lt;sub>w&lt;/sub>S&lt;sub>x&lt;/sub>Se&lt;sub>y&lt;/sub>Te&lt;sub>z&lt;/sub> chalcogenide thin films one can significantly tailor their linear and nonlinear optical properties. Modelling of spectroscopic ellipsometry data collected on the as-deposited chalcogenide thin films is used to evaluate their linear and nonlinear properties. Moreover, Raman and Fourier-transform infrare</description><dates><release>2020-01-01T00:00:00Z</release><publication>2020 Jul</publication><modification>2025-04-04T13:38:33.546Z</modification><creation>2025-04-04T13:38:33.546Z</creation></dates><accession>S-EPMC7367863</accession><cross_references><pubmed>32681142</pubmed><doi>10.1038/s41598-020-67377-9</doi></cross_references></HashMap>