{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Luo N"],"funding":["Natural Science Foundation of Guangxi Province (Guangxi Natural Science Foundation)","Centre of Excellence for Electromaterials Science, Australian Research Council (ARC Centre of Excellence for Electromaterials Science)","National Natural Science Foundation of China (National Science Foundation of China)"],"pagination":["4824"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC7515927"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["11(1)"],"pubmed_abstract":["Dielectric capacitors with high energy storage density (W<sub>rec</sub>) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W<sub>rec</sub> of 6.3 J cm<sup>-3</sup> with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO<sub>3</sub>-xAgTaO<sub>3</sub> solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10<sup>6</sup> cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelec"],"journal":["Nature communications"],"pubmed_title":["Constructing phase boundary in AgNbO<sub>3</sub> antiferroelectrics: pathway simultaneously achieving high energy density and efficiency."],"pmcid":["PMC7515927"],"funding_grant_id":["11864004","FT140100698","DP190101155","2017GXNSFBA198132"],"pubmed_authors":["Zhang G","Li JF","Luo N","Han K","Liao X","Cabral MJ","Liao C","Chen X","Zhang S","Wei Y","Feng Q"],"additional_accession":[]},"is_claimable":false,"name":"Constructing phase boundary in AgNbO<sub>3</sub> antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.","description":"Dielectric capacitors with high energy storage density (W<sub>rec</sub>) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W<sub>rec</sub> of 6.3 J cm<sup>-3</sup> with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO<sub>3</sub>-xAgTaO<sub>3</sub> solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10<sup>6</sup> cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelec","dates":{"release":"2020-01-01T00:00:00Z","publication":"2020 Sep","modification":"2025-04-04T22:19:54.623Z","creation":"2020-10-29T09:08:40Z"},"accession":"S-EPMC7515927","cross_references":{"pubmed":["32973146"],"doi":["10.1038/s41467-020-18665-5"]}}