<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Luo N</submitter><funding>Natural Science Foundation of Guangxi Province (Guangxi Natural Science Foundation)</funding><funding>Centre of Excellence for Electromaterials Science, Australian Research Council (ARC Centre of Excellence for Electromaterials Science)</funding><funding>National Natural Science Foundation of China (National Science Foundation of China)</funding><pagination>4824</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC7515927</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>11(1)</volume><pubmed_abstract>Dielectric capacitors with high energy storage density (W&lt;sub>rec&lt;/sub>) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W&lt;sub>rec&lt;/sub> of 6.3 J cm&lt;sup>-3&lt;/sup> with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO&lt;sub>3&lt;/sub>-xAgTaO&lt;sub>3&lt;/sub> solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10&lt;sup>6&lt;/sup> cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelec</pubmed_abstract><journal>Nature communications</journal><pubmed_title>Constructing phase boundary in AgNbO&lt;sub>3&lt;/sub> antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.</pubmed_title><pmcid>PMC7515927</pmcid><funding_grant_id>11864004</funding_grant_id><funding_grant_id>FT140100698</funding_grant_id><funding_grant_id>DP190101155</funding_grant_id><funding_grant_id>2017GXNSFBA198132</funding_grant_id><pubmed_authors>Zhang G</pubmed_authors><pubmed_authors>Li JF</pubmed_authors><pubmed_authors>Luo N</pubmed_authors><pubmed_authors>Han K</pubmed_authors><pubmed_authors>Liao X</pubmed_authors><pubmed_authors>Cabral MJ</pubmed_authors><pubmed_authors>Liao C</pubmed_authors><pubmed_authors>Chen X</pubmed_authors><pubmed_authors>Zhang S</pubmed_authors><pubmed_authors>Wei Y</pubmed_authors><pubmed_authors>Feng Q</pubmed_authors></additional><is_claimable>false</is_claimable><name>Constructing phase boundary in AgNbO&lt;sub>3&lt;/sub> antiferroelectrics: pathway simultaneously achieving high energy density and efficiency.</name><description>Dielectric capacitors with high energy storage density (W&lt;sub>rec&lt;/sub>) and efficiency (η) are in great demand for high/pulsed power electronic systems, but the state-of-the-art lead-free dielectric materials are facing the challenge of increasing one parameter at the cost of the other. Herein, we report that high W&lt;sub>rec&lt;/sub> of 6.3 J cm&lt;sup>-3&lt;/sup> with η of 90% can be simultaneously achieved by constructing a room temperature M2-M3 phase boundary in (1-x)AgNbO&lt;sub>3&lt;/sub>-xAgTaO&lt;sub>3&lt;/sub> solid solution system. The designed material exhibits high energy storage stability over a wide temperature range of 20-150 °C and excellent cycling reliability up to 10&lt;sup>6&lt;/sup> cycles. All these merits achieved in the studied solid solution are attributed to the unique relaxor antiferroelec</description><dates><release>2020-01-01T00:00:00Z</release><publication>2020 Sep</publication><modification>2025-04-04T22:19:54.623Z</modification><creation>2020-10-29T09:08:40Z</creation></dates><accession>S-EPMC7515927</accession><cross_references><pubmed>32973146</pubmed><doi>10.1038/s41467-020-18665-5</doi></cross_references></HashMap>