{"database":"biostudies-literature","file_versions":[],"scores":null,"additional":{"submitter":["Liu J"],"funding":["Jiangsu Key Laboratory of Advanced Micro&amp;Nano Materials and Technology","Fundamental Research Funds for the Central Universities","National Natural Science Foundation of China","Natural Science Foundation of Jiangsu Province"],"pagination":["6727524"],"full_dataset_link":["https://www.ebi.ac.uk/biostudies/studies/S-EPMC7877374"],"repository":["biostudies-literature"],"omics_type":["Unknown"],"volume":["2020"],"pubmed_abstract":["Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (<i>I-V</i>) ratio. Several strategies for practically creating asymmetry in nanoscale components have been demonstrated, but complex fabrication procedures, high cost, and incomplete mechanistic understanding have significantly limited large-scale applications of these components. In this work, we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Waals (vdW) heterostructures. Janus MoSSe has an intrinsic dipole due to its asymmetric structure and, consequently, can act as either an n-type or p-type diode depending on the face at the interior of the stacked structure (SeMoS-SMoS vs. SMoSe-SMoS). In each configuration, vdW forces dominate the interfacial interactions, and thus, Fermi level pinning is largely suppressed. Our transport calculations show that not only does the intrinsic dipole cause asymmetric <i>I-V</i> characteristics in the MSM structure but also that different transmission mechanisms are involved across the S-S (direct tunneling) and S-Se interface (thermionic excitation). This work illustrates a simple and practical method to introduce asymmetric Schottky barriers into an MSM structure and provides a conceptual framework which can be extended to other 2D Janus semiconductors."],"journal":["Research (Washington, D.C.)"],"pubmed_title":["Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials."],"pmcid":["PMC7877374"],"funding_grant_id":["30920041116","51602155","30920021159","51722102","BK20180448","30919011405","21773120"],"pubmed_authors":["Liu X","Ren JC","Liu J","Li S","Shen T","Butch CJ","Liu W"],"additional_accession":[]},"is_claimable":false,"name":"Asymmetric Schottky Contacts in van der Waals Metal-Semiconductor-Metal Structures Based on Two-Dimensional Janus Materials.","description":"Physical and electronic asymmetry plays a crucial role in rectifiers and other devices with a directionally variant current-voltage (<i>I-V</i>) ratio. Several strategies for practically creating asymmetry in nanoscale components have been demonstrated, but complex fabrication procedures, high cost, and incomplete mechanistic understanding have significantly limited large-scale applications of these components. In this work, we present density functional theory calculations which demonstrate asymmetric electronic properties in a metal-semiconductor-metal (MSM) interface composed of stacked van der Waals (vdW) heterostructures. Janus MoSSe has an intrinsic dipole due to its asymmetric structure and, consequently, can act as either an n-type or p-type diode depending on the face at the interior of the stacked structure (SeMoS-SMoS vs. SMoSe-SMoS). In each configuration, vdW forces dominate the interfacial interactions, and thus, Fermi level pinning is largely suppressed. Our transport calculations show that not only does the intrinsic dipole cause asymmetric <i>I-V</i> characteristics in the MSM structure but also that different transmission mechanisms are involved across the S-S (direct tunneling) and S-Se interface (thermionic excitation). This work illustrates a simple and practical method to introduce asymmetric Schottky barriers into an MSM structure and provides a conceptual framework which can be extended to other 2D Janus semiconductors.","dates":{"release":"2020-01-01T00:00:00Z","publication":"2020","modification":"2025-05-31T23:16:21.313Z","creation":"2025-05-31T23:16:21.313Z"},"accession":"S-EPMC7877374","cross_references":{"pubmed":["33623908"],"doi":["10.34133/2020/6727524"]}}