<HashMap><database>biostudies-literature</database><scores/><additional><submitter>Kim T</submitter><funding>National Research Foundation of Korea (NRF)</funding><funding>Samsung</funding><funding>Russian Foundation for Basic Research (RFBR)</funding><pagination>3280</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8172855</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>12(1)</volume><pubmed_abstract>The manipulation of magnetization with interfacial modification using various spin-orbit coupling phenomena has been recently revisited due to its scientific and technological potential for next-generation memory devices. Herein, we experimentally and theoretically demonstrate the interfacial Dzyaloshinskii-Moriya interaction characteristics penetrating through a MgO dielectric layer inserted between the Pt and CoFeSiB. The inserted MgO layer seems to function as a chiral exchange interaction mediator of the interfacial Dzyaloshinskii-Moriya interaction from the heavy metal atoms to ferromagnet ones. The potential physical mechanism of the anti-symmetric exchange is based on the tunneling-like behavior of conduction electrons through the semi-conductor-like ultrathin MgO. Such behavior can be correlated with the oscillations of the indirect exchange coupling of the Ruderman-Kittel-Kasuya-Yosida type. From the theoretical demonstration, we could provide approximate estimation and show qualitative trends peculiar to the system under investigation.</pubmed_abstract><journal>Nature communications</journal><pubmed_title>Ruderman-Kittel-Kasuya-Yosida-type interfacial Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnet heterostructures.</pubmed_title><pmcid>PMC8172855</pmcid><funding_grant_id>19-02-00530</funding_grant_id><funding_grant_id>Q1514435</funding_grant_id><funding_grant_id>2018H1A2A1062616</funding_grant_id><funding_grant_id>2015M3D1A1070465</funding_grant_id><pubmed_authors>Kim T</pubmed_authors><pubmed_authors>Kim GW</pubmed_authors><pubmed_authors>Samardak AS</pubmed_authors><pubmed_authors>Kim YK</pubmed_authors><pubmed_authors>Kim YJ</pubmed_authors><pubmed_authors>Belmeguenai M</pubmed_authors><pubmed_authors>Cha IH</pubmed_authors><pubmed_authors>Stashkevich A</pubmed_authors><pubmed_authors>Roussigne Y</pubmed_authors><pubmed_authors>Cherif SM</pubmed_authors></additional><is_claimable>false</is_claimable><name>Ruderman-Kittel-Kasuya-Yosida-type interfacial Dzyaloshinskii-Moriya interaction in heavy metal/ferromagnet heterostructures.</name><description>The manipulation of magnetization with interfacial modification using various spin-orbit coupling phenomena has been recently revisited due to its scientific and technological potential for next-generation memory devices. Herein, we experimentally and theoretically demonstrate the interfacial Dzyaloshinskii-Moriya interaction characteristics penetrating through a MgO dielectric layer inserted between the Pt and CoFeSiB. The inserted MgO layer seems to function as a chiral exchange interaction mediator of the interfacial Dzyaloshinskii-Moriya interaction from the heavy metal atoms to ferromagnet ones. The potential physical mechanism of the anti-symmetric exchange is based on the tunneling-like behavior of conduction electrons through the semi-conductor-like ultrathin MgO. Such behavior can be correlated with the oscillations of the indirect exchange coupling of the Ruderman-Kittel-Kasuya-Yosida type. From the theoretical demonstration, we could provide approximate estimation and show qualitative trends peculiar to the system under investigation.</description><dates><release>2021-01-01T00:00:00Z</release><publication>2021 Jun</publication><modification>2024-11-21T04:11:23.514Z</modification><creation>2022-02-10T13:57:00.74Z</creation></dates><accession>S-EPMC8172855</accession><cross_references><pubmed>34078887</pubmed><doi>10.1038/s41467-021-23586-y</doi></cross_references></HashMap>