<HashMap><database>biostudies-literature</database><scores><citationCount>0</citationCount><reanalysisCount>0</reanalysisCount><viewCount>53</viewCount><searchCount>0</searchCount></scores><additional><submitter>Lee S</submitter><funding>National Science Foundation (NSF)</funding><funding>National Science Foundation</funding><pagination>3982</pagination><full_dataset_link>https://www.ebi.ac.uk/biostudies/studies/S-EPMC8233328</full_dataset_link><repository>biostudies-literature</repository><omics_type>Unknown</omics_type><volume>12(1)</volume><pubmed_abstract>Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p&lt;sup>+&lt;/sup>n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm&lt;sup>2&lt;/sup> under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm&lt;sup>2&lt;/sup> is maintained at 1.3 V versus RHE for 7 days.</pubmed_abstract><journal>Nature communications</journal><pubmed_title>Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition.</pubmed_title><pmcid>PMC8233328</pmcid><funding_grant_id>DMR-1720595</funding_grant_id><funding_grant_id>CBET-1702944</funding_grant_id><funding_grant_id>ECCS-1542159</funding_grant_id><pubmed_authors>Lee S</pubmed_authors><pubmed_authors>Ji L</pubmed_authors><pubmed_authors>Yu ET</pubmed_authors><pubmed_authors>De Palma AC</pubmed_authors><view_count>53</view_count></additional><is_claimable>false</is_claimable><name>Scalable, highly stable Si-based metal-insulator-semiconductor photoanodes for water oxidation fabricated using thin-film reactions and electrodeposition.</name><description>Metal-insulator-semiconductor (MIS) structures are widely used in Si-based solar water-splitting photoelectrodes to protect the Si layer from corrosion. Typically, there is a tradeoff between efficiency and stability when optimizing insulator thickness. Moreover, lithographic patterning is often required for fabricating MIS photoelectrodes. In this study, we demonstrate improved Si-based MIS photoanodes with thick insulating layers fabricated using thin-film reactions to create localized conduction paths through the insulator and electrodeposition to form metal catalyst islands. These fabrication approaches are low-cost and highly scalable, and yield MIS photoanodes with low onset potential, high saturation current density, and excellent stability. By combining this approach with a p&lt;sup>+&lt;/sup>n-Si buried junction, further improved oxygen evolution reaction (OER) performance is achieved with an onset potential of 0.7 V versus reversible hydrogen electrode (RHE) and saturation current density of 32 mA/cm&lt;sup>2&lt;/sup> under simulated AM1.5G illumination. Moreover, in stability testing in 1 M KOH aqueous solution, a constant photocurrent density of ~22 mA/cm&lt;sup>2&lt;/sup> is maintained at 1.3 V versus RHE for 7 days.</description><dates><release>2021-01-01T00:00:00Z</release><publication>2021 Jun</publication><modification>2024-02-15T09:09:51.822Z</modification><creation>2022-02-10T18:34:59.243Z</creation></dates><accession>S-EPMC8233328</accession><cross_references><pubmed>34172754</pubmed><doi>10.1038/s41467-021-24229-y</doi></cross_references></HashMap>